Characterization of Growth Interface for Cubic Boron Nitride Synthesized by the Static High Temperature-High Pressure Catalytic Method

2015 ◽  
Vol 163 (1) ◽  
pp. 139-147 ◽  
Author(s):  
Bin Xu ◽  
Wen Zhang ◽  
Meizhe Lv ◽  
Xiaofei Guo ◽  
Haitong Su
1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.


2006 ◽  
Vol 61 (12) ◽  
pp. 1541-1546 ◽  
Author(s):  
Gennadi A. Dubitsky ◽  
Vladimir D. Blank ◽  
Sergei G. Buga ◽  
Elena E. Semenova ◽  
Nadejda R. Serebryanaya ◽  
...  

Superhard superconducting samples with a critical temperature of TC = 10.5 - 12.6 K were obtained by high-pressure / high-temperature sintering of synthetic diamond powders coated with a niobium film and in 50% - 50% composition with superhard C60 fullerene. Superhard superconductors with TC = 9.3 K were obtained when diamond and molybdenum powders were sintered at a pressure of 7.7 GPa and a temperature of 2173 K. Superconducting samples with TC = 36.1 - 37.5 K have been obtained in the systems diamond-MgB2 and cubic boron nitride-MgB2.


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