Influence of oxygen vacancies on surface charge potential and transportation properties of Al-doped ZnO nanostructures produced via atomic layer deposition

2017 ◽  
Vol 709 ◽  
pp. 819-828 ◽  
Author(s):  
Firoz Khan ◽  
Seong-Ho Baek ◽  
Jae Hyun Kim
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Charge ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Zno Nanostructures ◽  
Layer Deposition ◽  
Charge Potential ◽  
Doped Zno

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

Nitrogen-doped ZnO/n-Si core–shell nanowire photodiode prepared by atomic layer deposition

2015 ◽  
Vol 33 ◽  
pp. 154-160 ◽  
Author(s):  
Kyung Yong Ko ◽  
Hyemin Kang ◽  
Wonseon Lee ◽  
Chang-Wan Lee ◽  
Jusang Park ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Core Shell ◽  
Nitrogen Doped ◽  
Layer Deposition ◽  
Doped Zno

Atomic Layer Deposition of Rh/ZnO Nanostructures for Anti-humidity Detection of Trimethylamine

2022 ◽  
pp. 131347
Author(s):  
Zishuo Li ◽  
Chengming lou ◽  
Guanglu Lei ◽  
Guocai Lu ◽  
Hongyin Pan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Nanostructures ◽  
Layer Deposition

Preparation of boron-doped ZnO thin films by photo-atomic layer deposition

2001 ◽  
Vol 65 (1-4) ◽  
pp. 125-132 ◽  
Author(s):  
Y. Yamamoto ◽  
K. Saito ◽  
K. Takahashi ◽  
M. Konagai
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Boron Doped ◽  
Layer Deposition ◽  
Doped Zno

In situ Al-doped ZnO films by atomic layer deposition with an interrupted flow

2015 ◽  
Vol 165 ◽  
pp. 245-252 ◽  
Author(s):  
Jheng-Ming Huang ◽  
Ching-Shun Ku ◽  
Chih-Ming Lin ◽  
San-Yuan Chen ◽  
Hsin-Yi Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno ◽  
Interrupted Flow

Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

2018 ◽  
Vol 39 (3) ◽  
pp. 033004 ◽  
Author(s):  
Li Chen ◽  
Xinliang Chen ◽  
Zhongxin Zhou ◽  
Sheng Guo ◽  
Ying Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Characteristics ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Doped Zno

Columnar nitrogen-doped ZnO nanostructured thin films obtained through atomic layer deposition

2021 ◽  
Author(s):  
Jorge Rodríguez-López ◽  
RICARDO RANGEL ◽  
Antonio Ramos ◽  
Dainet Berman ◽  
Patricia Quintana-Owen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Nitrogen Doped ◽  
Nanostructured Thin Films ◽  
Layer Deposition ◽  
Doped Zno
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