Enhanced electrical properties of epitaxial PZT films deposited by sol-gel method and crystallized by microwave irradiation

2018 ◽  
Vol 757 ◽  
pp. 24-30 ◽  
Author(s):  
Ya-Ju Zhang ◽  
Zhan Jie Wang ◽  
Yu Bai ◽  
Yi Zhuo Li ◽  
Wei Liu ◽  
...  
2005 ◽  
Vol 328 (1) ◽  
pp. 21-25 ◽  
Author(s):  
Mengwei Liu ◽  
Jianhua Tong ◽  
Jing Wang ◽  
Weijie Dong ◽  
Tianhong Cui ◽  
...  

2015 ◽  
Vol 76 (1) ◽  
pp. 220-226 ◽  
Author(s):  
Dongfang Chen ◽  
Shengli Huang ◽  
Jianguo Chen ◽  
Jinrong Cheng

2018 ◽  
Vol 29 (8) ◽  
pp. 6879-6891 ◽  
Author(s):  
Sobhi Hcini ◽  
Aref Omri ◽  
Michel Boudard ◽  
Mohamed Lamjed Bouazizi ◽  
Abdessalem Dhahri ◽  
...  

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.


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