scholarly journals Effects of the Introduction of UV Irradiation and Rapid Thermal Annealing Process to Sol-Gel Method Derived Ferroelectric Sr0.9Bi2.1Ta1.8Nb0.2O9Thin Films on Crystallization and Dielectric/Electrical Properties

2004 ◽  
Vol 17 (1) ◽  
pp. 7-15
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Uv Irradiation ◽  
Sol Gel ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Gel Method ◽  
Sol Gel Method ◽  
Thermal Annealing Process

Electrical properties of MOCVD BST thin films annealed by rapid thermal annealing process

2001 ◽  
Vol 33 (1-4) ◽  
pp. 291-301 ◽  
Author(s):  
Deok-sin Kil ◽  
Jong-beom Park ◽  
Jun-sik Lee ◽  
Jong-woo Yoon ◽  
Yong-sik Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Bst Thin Films ◽  
Thermal Annealing Process

Influence of Rapid Thermal Annealing on the Structure and Magnetic Properties of CoFe2O4Films Prepared by Sol-Gel Method

2013 ◽  
Vol 445 (1) ◽  
pp. 18-25 ◽  
Author(s):  
Bin Zhu ◽  
Chengtao Yang ◽  
Quntiao Xie ◽  
Yalei Zhang ◽  
Ping Li
Keyword(s):  
Magnetic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Hydrogen Behavior in PECVD Nitride by SiH4 & ND3 During RTA

1996 ◽  
Vol 424 ◽  
Author(s):  
S. S. He ◽  
V. L. Shannon ◽  
T. Nguyen
Keyword(s):  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Wave Numbers ◽  
Thermal Annealing Process

AbstractPECVD silicon nitride was deposited by silane and deuterium ammonia. Silicon rich and nitrogen rich silicon nitride were deposited by varying the ratio of the SiH4/DH3. From FTIR, we found that the wave numbers of SiD and ND shifted lower when compared to SiH and NH bond in the NH3 nitride. In Si-rich nitride, both Si-H and Si-D bonds were found, which is different from N-rich nitride, where only an ND bond was found. Most of the hydrogen in NH(D) comes from the ammonia during PECVD deposition. We found that some of the deuterium exchanges its bonding to silicon from the initial bonding to nitrogen during a rapid thermal annealing process.

Sign in / Sign up

Export Citation Format

Share Document