Mg/Ca doping ameliorates the thermoelectric properties of GeTe: Influence of electronic structure engineering

2020 ◽  
Vol 843 ◽  
pp. 155989 ◽  
Author(s):  
D. Krishna Bhat ◽  
U. Sandhya Shenoy
Keyword(s):  
Electronic Structure ◽  
Thermoelectric Properties ◽  
Ca Doping ◽  
Structure Engineering

Resonance levels in GeTe thermoelectrics: zinc as a new multifaceted dopant

2020 ◽  
Vol 44 (41) ◽  
pp. 17664-17670
Author(s):  
D. Krishna Bhat ◽  
U. Sandhya Shenoy
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Resonance States ◽  
Structure Engineering

Electronic-structure engineering of GeTe:Zn doping enhances thermoelectric properties via synergy of resonance states, increase in band gap and hyper-convergence.

scholarly journals Improving the ZT of SnTe using electronic structure engineering: unusual behavior of Bi dopant in the presence of Pb as a co-dopant

2021 ◽  
Vol 2 (19) ◽  
pp. 6267-6271 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
Resonance Level ◽  
Unusual Behavior ◽  
Level Increase ◽  
Structure Engineering

Extraordinary tuning of electronic structure of SnTe by Bi in the presence of Pb as a co-adjuvant dopant. Synergistic effect of resonance level, increase in the band gap, valence and conduction sub-bands convergence leads to enhanced TE performance.

Electronic structure engineering of single atomic Ru by Ru nanoparticles to enable enhanced activity for alkaline water reduction

2019 ◽  
Vol 7 (33) ◽  
pp. 19531-19538 ◽  
Author(s):  
Qi Hu ◽  
Guomin Li ◽  
Xiaowan Huang ◽  
Ziyu Wang ◽  
Hengpan Yang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Electronic Structures ◽  
Alkaline Water ◽  
Water Reduction ◽  
Ru Nanoparticles ◽  
Enhanced Activity ◽  
Structure Engineering

The electronic structures of single atomic Ru (SA-Ru) were suitably optimized by nearby Ru NPs for boosting the hydrogen evolution reaction (HER) over SA-Ru.

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

2019 ◽  
Vol 7 (16) ◽  
pp. 4817-4821 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
High Performance ◽  
Room Temperature ◽  
Band Offset ◽  
Valence Band Offset ◽  
Co Doping ◽  
Tin Telluride ◽  
Structure Engineering

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

scholarly journals Electronic Structure Engineering Achieved via Organic Ligands in Silicon Nanocrystals

2020 ◽  
Vol 32 (15) ◽  
pp. 6326-6337 ◽  
Author(s):  
Kateřina Dohnalová ◽  
Prokop Hapala ◽  
Kateřina Kůsová ◽  
Ivan Infante
Keyword(s):  
Electronic Structure ◽  
Silicon Nanocrystals ◽  
Organic Ligands ◽  
Structure Engineering

The electronic structure and thermoelectric properties of BiTl9Te6 and SbTl9Te6: First-principles calculations

2015 ◽  
Vol 118 (23) ◽  
pp. 235703 ◽  
Author(s):  
Li Bin Guo ◽  
Lingyun Ye ◽  
Yuan Xu Wang ◽  
Jue Ming Yang ◽  
Yu Li Yan ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Thermoelectric Properties ◽  
First Principles ◽  
First Principles Calculations
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