Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

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Improving the ZT of SnTe using electronic structure engineering: unusual behavior of Bi dopant in the presence of Pb as a co-dopant

Materials Advances ◽

10.1039/d1ma00696g ◽

2021 ◽

Vol 2 (19) ◽

pp. 6267-6271 ◽

Cited By ~ 3

Author(s):

U. Sandhya Shenoy ◽

D. Krishna Bhat

Keyword(s):

Electronic Structure ◽

Synergistic Effect ◽

Band Gap ◽

Resonance Level ◽

Unusual Behavior ◽

Level Increase ◽

Structure Engineering

Extraordinary tuning of electronic structure of SnTe by Bi in the presence of Pb as a co-adjuvant dopant. Synergistic effect of resonance level, increase in the band gap, valence and conduction sub-bands convergence leads to enhanced TE performance.

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Synergistic effect of La and Co co-doping on room-temperature ferromagnetism enhancement of TiO2 nanoparticles

Ceramics International ◽

10.1016/j.ceramint.2018.01.027 ◽

2018 ◽

Vol 44 (6) ◽

pp. 6362-6369 ◽

Cited By ~ 13

Author(s):

Hong Zhang ◽

Xinhua Ouyang ◽

Bo Yang ◽

Ryan Lutes ◽

Yonghao Ni

Keyword(s):

Synergistic Effect ◽

Tio2 Nanoparticles ◽

Room Temperature ◽

Room Temperature Ferromagnetism ◽

Co Doping

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Resonance levels in GeTe thermoelectrics: zinc as a new multifaceted dopant

New Journal of Chemistry ◽

10.1039/d0nj04273k ◽

2020 ◽

Vol 44 (41) ◽

pp. 17664-17670

Author(s):

D. Krishna Bhat ◽

U. Sandhya Shenoy

Keyword(s):

Electronic Structure ◽

Band Gap ◽

Thermoelectric Properties ◽

Resonance States ◽

Structure Engineering

Electronic-structure engineering of GeTe:Zn doping enhances thermoelectric properties via synergy of resonance states, increase in band gap and hyper-convergence.

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Growth of vertical heterostructures based on orthorhombic SnSe/hexagonal In2Se3 for high-performance photodetectors

Nanoscale Advances ◽

10.1039/c9na00120d ◽

2019 ◽

Vol 1 (7) ◽

pp. 2606-2611 ◽

Cited By ~ 1

Author(s):

Xuan-Ze Li ◽

Yi-Fan Wang ◽

Jing Xia ◽

Xiang-Min Meng

Keyword(s):

Electronic Structure ◽

High Performance ◽

Layered Materials ◽

Two Dimensional ◽

Novel Device ◽

2D Layered Materials ◽

Device Applications ◽

Structure Engineering

Vertical heterostructures based on two-dimensional (2D) layered materials are ideal platforms for electronic structure engineering and novel device applications.

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Fabrication of high-performance ZnO-based thin-film transistors by Mg/H co-doping at room temperature

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-07412-1 ◽

2022 ◽

Author(s):

Zongjin Jiang ◽

Dongbo Yin ◽

Deliang Zhu ◽

Wangying Xu ◽

Shun Han ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Room Temperature ◽

Co Doping

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Carbon-doping-induced energy-band modification and vacancies in SnS2 nanosheets for room-temperature ppb-level NO2 detection

Inorganic Chemistry Frontiers ◽

10.1039/d1qi00930c ◽

2021 ◽

Author(s):

Ruozhen Wu ◽

Juanyuan Hao ◽

Tingting Wang ◽

Shengliang Zheng ◽

You Wang

Keyword(s):

Synergistic Effect ◽

Gas Sensors ◽

Energy Band ◽

High Performance ◽

Room Temperature ◽

Carbon Doping ◽

No2 Detection

Carbon-doping mediated synergistic effect of energy-band modification and vacancy provides a new solution for developing high-performance LMDs-based gas sensors.

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Electronic Structure of Amorphous Silicon

MRS Proceedings ◽

10.1557/proc-491-523 ◽

1997 ◽

Vol 491 ◽

Author(s):

G. Allan ◽

C. Delerue ◽

M. Lannoo

Keyword(s):

Electronic Structure ◽

Amorphous Silicon ◽

Tight Binding ◽

Localized States ◽

Band Offset ◽

Valence Band Offset ◽

Tight Binding Approximation ◽

Exponential Tails ◽

Si Model ◽

Hydrogenated Amorphous

ABSTRACTThe electronic structure of a continuous network model of tetrahedrally bonded amorphous silicon (a-Si) and of a model hydrogenated amorphous silicon (a-Si:H) that we have built from the a-Si model are calculated in the tight binding approximation. The band edges near the gap are characterized by exponential tails of localized states induced mainly by the variations in bond angles. The spatial localization of the states is compared between a-Si and a-Si:H. Valence band offset between the amorphous and the crystalline phases is calculated.

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