High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth process

2004 ◽  
Vol 267 (1-2) ◽  
pp. 17-21 ◽  
Author(s):  
M.C. Debnath ◽  
T. Zhang ◽  
C. Roberts ◽  
L.F. Cohen ◽  
R.A. Stradling
1965 ◽  
Vol 36 (7) ◽  
pp. 2321-2323 ◽  
Author(s):  
Joel F. Spivak ◽  
James A. Carroll

2005 ◽  
Vol 20 (12) ◽  
pp. 1153-1156 ◽  
Author(s):  
T Zhang ◽  
J J Harris ◽  
S K Clowes ◽  
M Debnath ◽  
A Bennett ◽  
...  

1988 ◽  
Vol 135 ◽  
Author(s):  
S. Yeh ◽  
D. J. Cheng ◽  
G. F. Chi ◽  
M. T. Chu

AbstractPolycrystalline InSb thin films have been prepared by the two-source thermal co-evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown films have been heat treated under N2 atmosphere at different temperatures ranged from 520 to 535 C. Both as-grown films have (220) diffraction as the main peak. The heat treated films which have high mobility values show the (111) preferred orientation. For the heat treated film on oxidized Si substrate, the TEM cross sectional morphologies show the existence of the precipitaion of the second phase and the interface diffusion of InSb into the SiOx layer.


2001 ◽  
Vol 89 (5) ◽  
pp. 2606-2612 ◽  
Author(s):  
T. Wagner ◽  
G. Richter ◽  
M. Rühle

1966 ◽  
Vol 9 (5) ◽  
pp. 383-387 ◽  
Author(s):  
J.A. Carroll ◽  
J.F. Spivak

1993 ◽  
Vol 310 ◽  
Author(s):  
Masaru Shimizu ◽  
Masashi Fujimoto ◽  
Takuma Katayama ◽  
Tadashi Shiosaki ◽  
Kenichi Nakaya ◽  
...  

AbstractFerroelectric Pb(Zr,Ti)O3(PZT) films with a perovskite phase were successfully grown by MOCVD using a 6 inch wafer CVD system. A two step growth process was proposed to obtain perovskite PZT films at high gas supplying ratios of [Zr]/([Zr]+[Ti]). The electrical properties of the PZT films obtained were measured. Large area growths of PZT films were carried out and the uniform films could be grown on the entire area of a 6 inch Si wafer. It was also found that the step coverage characteristic of the films grown by MOCVD was good.


Author(s):  
J.A. Eades ◽  
E. Grünbaum

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.


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