Structural and Electrical Characteristics of the Thermally Evaporated InSb Thin Films

1988 ◽  
Vol 135 ◽  
Author(s):  
S. Yeh ◽  
D. J. Cheng ◽  
G. F. Chi ◽  
M. T. Chu
Keyword(s):  
Thin Films ◽  
High Mobility ◽  
Main Peak ◽  
Second Phase ◽  
Electrical Characteristics ◽  
Cross Sectional ◽  
N2 Atmosphere ◽  
Heat Treated ◽  
Insb Thin Films ◽  
Different Temperatures

AbstractPolycrystalline InSb thin films have been prepared by the two-source thermal co-evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown films have been heat treated under N2 atmosphere at different temperatures ranged from 520 to 535 C. Both as-grown films have (220) diffraction as the main peak. The heat treated films which have high mobility values show the (111) preferred orientation. For the heat treated film on oxidized Si substrate, the TEM cross sectional morphologies show the existence of the precipitaion of the second phase and the interface diffusion of InSb into the SiOx layer.

Microstructures of The Electron-Beam Evaporated InSb Thin Films

1988 ◽  
Vol 135 ◽  
Author(s):  
D.J. Cheng ◽  
S. Yeh ◽  
G.F. Chi
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Second Phase ◽  
Si Substrate ◽  
Cross Sectional ◽  
N2 Atmosphere ◽  
Heat Treated ◽  
Insb Thin Films ◽  
Diffraction Patterns

AbstractPolycrystalline InSb thin films have been prepared by the two-source electron-beam evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown thin films have been heat treated under N2 atmosphere which is slightly mixed with air. A thin InOx layer is formed on the top surface of the thin film.After heat treatment, the InSb films grown on the oxidized Si substrate shows a preferred (111) orientation. While the films grown on Si substrate do not show such preferred orientation as evidenced by the X-ray diffraction patterns.The TEM cross sectional morphologies of the InSb film grown on oxidized Si substrate shows an ordered arrangement of the grains. While the film grown on the pure Si substrate shows a random arrangement of the grains. The film grown on the oxidized Si substrate also shows the existence of the twin boundary and an ordered arrangement of the precipitation of the second phase.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth process

2004 ◽  
Vol 267 (1-2) ◽  
pp. 17-21 ◽  
Author(s):  
M.C. Debnath ◽  
T. Zhang ◽  
C. Roberts ◽  
L.F. Cohen ◽  
R.A. Stradling
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
High Mobility ◽  
Insb Thin Films ◽  
Step Growth

Structural and electrical characteristics of InSb thin films grown by rf sputtering

1976 ◽  
Vol 47 (8) ◽  
pp. 3630-3639 ◽  
Author(s):  
J. E. Greene ◽  
C. E. Wickersham
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Electrical Characteristics ◽  
Insb Thin Films

Effect of different annealing procedures on the microstructure and the electrical properties of CSD derived (Ba,Sr)TiO3 thin films.

2004 ◽  
Vol 811 ◽  
Author(s):  
Sandip Halder ◽  
Theodor Schneller ◽  
Rainer Waser
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Chemical Solution ◽  
Annealing Furnace ◽  
Hot Plate ◽  
Cross Sectional ◽  
Microwave Electronics ◽  
Different Temperatures ◽  
Annealing Method

ABSTRACTProcessing of BST thin films is becoming more and more important for microwave electronics and for its probable incorporation in future high density DRAM's. A co-relation between processing and final device characteristics is of utmost importance. Differences in microstructure and electrical properties were observed when chemical solution deposited thin films were annealed using a conventional diffusion furnace, rapid thermal annealing furnace with different heating ramps, and a hot plate for pyrolysis prior crystallization. The solution was made with the propionate route and then deposited on Pt coated silicon wafers. Cross-sectional SEM's were performed on the different films. It was found that the microstructure depended on the annealing method of the film. The electrical properties of the films were also found to vary considerably. Frequency dependence of the dielectric constant was studied. The leakage study on different films was performed at different temperatures.

High‐Mobility InSb Thin Films by Recrystallization

1965 ◽  
Vol 36 (7) ◽  
pp. 2321-2323 ◽  
Author(s):  
Joel F. Spivak ◽  
James A. Carroll
Keyword(s):  
Thin Films ◽  
High Mobility ◽  
Insb Thin Films

Influence of RTA Treatment on the Properties of ZnO-CeO2 Dielectric Films

2014 ◽  
Vol 787 ◽  
pp. 232-235 ◽  
Author(s):  
Ching Fang Tseng ◽  
Ren Ya Yang ◽  
Chien Hua Chen
Keyword(s):  
Annealing Temperature ◽  
Substrate Surface ◽  
Sol Gel ◽  
Dielectric Films ◽  
Electrical Characteristics ◽  
Rapid Thermal Annealing Process ◽  
Heat Treated ◽  
Different Temperatures ◽  
Thermal Annealing Process ◽  
Deposited Films

The electrical and physical properties of ZnO-CeO2 thin films on n-type Si (100) substrates have been examined by sol-gel method. In addition, the structures were heat treated at different temperatures from 600 to 700oC using the RTA (Rapid Thermal Annealing) process and investigated the influence of RTA effect on their properties. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZnO-CeO2 peaks orientation perpendicular to the substrate surface and the grain size with the dependent on annealing temperature. The dependence of the physical and electrical characteristics on various annealing temperatures was investigated.

Optical Properties of Nano-CuInSi Thin Films Prepared by Multilayer Synthesized Method

2011 ◽  
Vol 403-408 ◽  
pp. 1094-1098
Author(s):  
Jian Sheng Xie ◽  
Ping Luan ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
N2 Atmosphere ◽  
Double Beam ◽  
Absorption Studies ◽  
Different Temperatures

Thin Nano-CuInSi films have been prepared by multilayer synthesized method using magnetron sputtering technology, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, the peak of main crystal phase is at 2θ=42.450°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated. The transmittance (T) spectra of the films were measured by Shimadzu UV-2450 double beam spectrophotometer. The calculated absorption coefficient is larger than 105 cm−1 when the wavelength is shorter than 750 nm. The band gap has been estimated from the optical absorption studies and found to be about 1.47 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films

2005 ◽  
Vol 20 (12) ◽  
pp. 1153-1156 ◽  
Author(s):  
T Zhang ◽  
J J Harris ◽  
S K Clowes ◽  
M Debnath ◽  
A Bennett ◽  
...  
Keyword(s):  
Thin Films ◽  
High Mobility ◽  
Insb Thin Films

scholarly journals Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1295
Author(s):  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Hwan-Seok Jeong ◽  
Seong-Hyun Hwang ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Layer Thickness ◽  
Active Layer ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Electrical Characteristics ◽  
Indium Gallium

Herein, we investigated the effects of active layer thickness (tS) on the electrical characteristics and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). IGTO TFTs, with tS values of 7 nm, 15 nm, 25 nm, 35 nm, and 50 nm, were prepared for this analysis. The drain current was only slightly modulated by the gate-to-source voltage, in the case of the IGTO TFT with tS = 50 nm. Under positive bias stress (PBS), the electrical stability of the IGTO TFTs with a tS less than 35 nm improved as the tS increased. However, the negative bias illumination stress (NBIS) stability of these IGTO TFTs deteriorated as the tS increased. To explain these phenomena, we compared the O1s spectra of IGTO thin films with different tS values, acquired using X-ray photoelectron spectroscopy. The characterization results revealed that the better PBS stability, and the low NBIS stability, of the IGTO TFTs with thicker active layers were mainly due to a decrease in the number of hydroxyl groups and an increase in the number of oxygen vacancies in the IGTO thin films with an increase in tS, respectively. Among the IGTO TFTs with different tS, the IGTO TFT with a 15-nm thick active layer exhibited the best electrical characteristics with a field-effect mobility (µFE) of 26.5 cm2/V·s, a subthreshold swing (SS) of 0.16 V/dec, and a threshold voltage (VTH) of 0.3 V. Moreover, the device exhibited robust stability under PBS (ΔVTH = 0.9 V) and NBIS (ΔVTH = −1.87 V).

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