Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications

2011 ◽  
Vol 315 (1) ◽  
pp. 68-73 ◽  
Author(s):  
T.J. Garrod ◽  
J. Kirch ◽  
P. Dudley ◽  
S. Kim ◽  
L.J. Mawst ◽  
...  
Author(s):  
М.А. Минтаиров ◽  
В.В. Евстропов ◽  
С.А. Минтаиров ◽  
М.З. Шварц ◽  
Н.А. Калюжный

A method for determining the p-n junction band gap from photocurrent quantum yield spectrum is proposed and substantiated in the work. The method has been applied to Ga(1-x)In(x)As p-n junctions grown by metal-organic vapor-phase epitaxy grown on metamorphic buffers. The difference between the band gap determined by the method and the electroluminescence spectrum maximum position did not exceed 3 meV. It is shown that the method can be used to determine the relationship between the band gap and the saturation current of Ga(1-x)In (a)As p-n junctions.


1992 ◽  
Vol 2 (4-5) ◽  
pp. 497-499
Author(s):  
A. Zaouk ◽  
A. Rudra ◽  
P. Basmaji ◽  
J.F. Carlin ◽  
P. Gibart

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano

2010 ◽  
Vol 49 (10) ◽  
pp. 101001 ◽  
Author(s):  
Kimihito Ooyama ◽  
Katsuya Sugawara ◽  
Shinya Okuzaki ◽  
Hiroyuki Taketomi ◽  
Hideto Miyake ◽  
...  

2004 ◽  
Vol 267 (1-2) ◽  
pp. 140-144 ◽  
Author(s):  
A. Dadgar ◽  
N. Oleynik ◽  
D. Forster ◽  
S. Deiter ◽  
H. Witek ◽  
...  

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