Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperature

2013 ◽  
Vol 378 ◽  
pp. 558-561 ◽  
Author(s):  
Naoto Kumagai ◽  
Shunsuke Ohkouchi ◽  
Katsuyuki Watanabe ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Annealing Process ◽  
Inas Quantum Dots

scholarly journals Evolution of InAs Quantum Dots during Annealing Process

2008 ◽  
Vol 114 (4) ◽  
pp. 919-923 ◽  
Author(s):  
Jia Guo-Zhi ◽  
Yao Jiang-Hong ◽  
Shu Yong-Chun ◽  
Xin Xiao-Dong ◽  
Pi-Biao
Keyword(s):  
Quantum Dots ◽  
Annealing Process ◽  
Inas Quantum Dots

scholarly journals Low-temperature scanning tunneling microscopy of selfassembled inas quantum dots grown by droplet epitaxy

2010 ◽  
Vol 3 (2) ◽  
pp. 1299-1304
Author(s):  
C. Durand ◽  
A. Peilloux ◽  
K. Suzuki ◽  
K. Kanisawa ◽  
B. Grandidier ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Droplet Epitaxy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Inas Quantum Dots ◽  
Temperature Scanning

Low-Density InAs Quantum Dots Grown on InP(001) Using Solid-Source Molecular Beam Epitaxy with a Post-Growth Annealing Process

2010 ◽  
Vol 49 (4) ◽  
pp. 041201 ◽  
Author(s):  
Ryosuke Kubota ◽  
Toshiharu Saiki ◽  
Philippe Regreny ◽  
Aziz Benamrouche ◽  
Michel Gendry
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Annealing Process ◽  
Low Density ◽  
Inas Quantum Dots

scholarly journals Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

2003 ◽  
Vol 93 (10) ◽  
pp. 5953-5958 ◽  
Author(s):  
H. H. Zhan ◽  
R. Nötzel ◽  
G. J. Hamhuis ◽  
T. J. Eijkemans ◽  
J. H. Wolter
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Postgrowth Annealing ◽  
Self Assembled

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

2019 ◽  
Vol 256 (5) ◽  
pp. 1800479
Author(s):  
Alexander Kosarev ◽  
Nikolay Bert ◽  
Vladimir Nevedomskii ◽  
Vladimir Chaldyshev ◽  
Valerii Preobrazhenskii ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Inas Quantum Dots ◽  
Low Temperature Grown Gaas

The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy

2006 ◽  
Vol 40 (5) ◽  
pp. 587-591 ◽  
Author(s):  
A. A. Tonkikh ◽  
G. E. Cirlin ◽  
N. K. Polyakov ◽  
Yu. B. Samsonenko ◽  
V. M. Ustinov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Inas Quantum Dots

Formation of InAs quantum dots on low-temperature GaAs epi-layer

2000 ◽  
Vol 218 (2-4) ◽  
pp. 209-213 ◽  
Author(s):  
X.D Wang ◽  
Z.C Niu ◽  
H Wang ◽  
S.L Feng
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Inas Quantum Dots ◽  
Low Temperature Gaas

Finite Carrier Confinement and Biexcitonic Complexes in Self-Assembled Inas Quantum Dots

1999 ◽  
Vol 583 ◽  
Author(s):  
A. Jaeger ◽  
T. Mankad ◽  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Theoretical Calculations ◽  
Binding Energies ◽  
Inas Quantum Dots ◽  
Potential Barriers ◽  
Confocal Scanning ◽  
Self Assembled ◽  
Scanning Optical Microscopy ◽  
Electron Wavefunction

AbstractThe luminescence properties of a single lnAs self-assembled quantum dot (QD) are studied by confocal scanning optical microscopy at low temperature. The observation of single QDs has been accomplished by epitaxial growth of QDs samples with low QD density (less than one QD per μm2) required by the diffraction limited spatial resolution of the microscope. In thick QDs with large confinement energies biexciton binding energies of up to 5.0 meV are found, while in thin and more weakly confined QDs the electron wavefunction penetrates into the surrounding barriers causing reduced biexciton binding energies of less than 2.0 meV. This result can be understood in terms of theoretical calculations of biexcitonic complexes in QDs with finite potential barriers.

A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers

2017 ◽  
Author(s):  
Akshay Balgarkashi ◽  
Mahitosh Biswas ◽  
Sandeep Singh ◽  
Debabrata Das ◽  
Anuj Bhatnagar ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Low Temperature ◽  
Inas Quantum Dots
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