Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

2019 ◽  
Vol 256 (5) ◽  
pp. 1800479
Author(s):  
Alexander Kosarev ◽  
Nikolay Bert ◽  
Vladimir Nevedomskii ◽  
Vladimir Chaldyshev ◽  
Valerii Preobrazhenskii ◽  
...  
2010 ◽  
Vol 3 (2) ◽  
pp. 1299-1304
Author(s):  
C. Durand ◽  
A. Peilloux ◽  
K. Suzuki ◽  
K. Kanisawa ◽  
B. Grandidier ◽  
...  

2003 ◽  
Vol 93 (10) ◽  
pp. 5953-5958 ◽  
Author(s):  
H. H. Zhan ◽  
R. Nötzel ◽  
G. J. Hamhuis ◽  
T. J. Eijkemans ◽  
J. H. Wolter

2006 ◽  
Vol 40 (5) ◽  
pp. 587-591 ◽  
Author(s):  
A. A. Tonkikh ◽  
G. E. Cirlin ◽  
N. K. Polyakov ◽  
Yu. B. Samsonenko ◽  
V. M. Ustinov ◽  
...  

2000 ◽  
Vol 218 (2-4) ◽  
pp. 209-213 ◽  
Author(s):  
X.D Wang ◽  
Z.C Niu ◽  
H Wang ◽  
S.L Feng

2013 ◽  
Vol 378 ◽  
pp. 558-561 ◽  
Author(s):  
Naoto Kumagai ◽  
Shunsuke Ohkouchi ◽  
Katsuyuki Watanabe ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa

1999 ◽  
Vol 583 ◽  
Author(s):  
A. Jaeger ◽  
T. Mankad ◽  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff

AbstractThe luminescence properties of a single lnAs self-assembled quantum dot (QD) are studied by confocal scanning optical microscopy at low temperature. The observation of single QDs has been accomplished by epitaxial growth of QDs samples with low QD density (less than one QD per μm2) required by the diffraction limited spatial resolution of the microscope. In thick QDs with large confinement energies biexciton binding energies of up to 5.0 meV are found, while in thin and more weakly confined QDs the electron wavefunction penetrates into the surrounding barriers causing reduced biexciton binding energies of less than 2.0 meV. This result can be understood in terms of theoretical calculations of biexcitonic complexes in QDs with finite potential barriers.


2017 ◽  
Author(s):  
Akshay Balgarkashi ◽  
Mahitosh Biswas ◽  
Sandeep Singh ◽  
Debabrata Das ◽  
Anuj Bhatnagar ◽  
...  

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  

2016 ◽  
Vol E99.C (3) ◽  
pp. 381-384 ◽  
Author(s):  
Takuma YASUDA ◽  
Nobuhiko OZAKI ◽  
Hiroshi SHIBATA ◽  
Shunsuke OHKOUCHI ◽  
Naoki IKEDA ◽  
...  

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