The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy
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2008 ◽
Vol 40
(3)
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pp. 550-555
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2001 ◽
Vol 40
(Part 1, No. 3B)
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pp. 1885-1887
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2012 ◽
Vol 132
(2)
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pp. 289-292
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2002 ◽
Vol 13
(2-4)
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pp. 1151-1154
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Keyword(s):
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2003 ◽
Vol 251
(1-4)
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pp. 145-149
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