High-quality SiGe films grown with compositionally graded buffer layers for solar cell applications

2013 ◽  
Vol 378 ◽  
pp. 226-229 ◽  
Author(s):  
Ryuji Oshima ◽  
Yoshinori Watanabe ◽  
Mitsuyuki Yamanaka ◽  
Hitoshi Kawanami ◽  
Isao Sakamoto ◽  
...  
1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.


2014 ◽  
Vol 212 (2) ◽  
pp. 282-290 ◽  
Author(s):  
M. Buffière ◽  
S. Harel ◽  
C. Guillot-Deudon ◽  
L. Arzel ◽  
N. Barreau ◽  
...  

2012 ◽  
Vol 27 ◽  
pp. 467-473 ◽  
Author(s):  
S. Gall ◽  
B. Paviet-Salomon ◽  
J. Lerat ◽  
T. Emeraud

2008 ◽  
Vol 103 (6) ◽  
pp. 064516 ◽  
Author(s):  
K. Clark ◽  
E. Maldonado ◽  
W. P. Kirk

2014 ◽  
Vol 60 ◽  
pp. 43-47 ◽  
Author(s):  
Tetsuhito Okamoto ◽  
Hironori Komaki ◽  
Junji Sasano ◽  
Shigeru Niki ◽  
Masanobu Izaki
Keyword(s):  

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