Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.

Low Pressure Mocvd Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

AbstractHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550ºC andthe growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GalnAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm-3 have been measured by electrochemical profiling.

scholarly journals Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7637
Author(s):  
Joshua Grant ◽  
Grey Abernathy ◽  
Oluwatobi Olorunsola ◽  
Solomon Ojo ◽  
Sylvester Amoah ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Great Promise ◽  
High Quality ◽  
Reactor Material ◽  
Monolithically Integrated ◽  
Vapor Deposition Technique

Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To achieve relatively high Sn incorporation, the use of higher pressure and/or higher order Ge hydrides precursors were reported. In this work, we successfully demonstrated the growth of high-quality GeSn with Sn composition of 16.7% at low pressure of 12 Torr. The alloy was grown using the commercially available GeH4 and SnCl4 precursors via a chemical vapor deposition reactor. Material and optical characterizations were performed to confirm the Sn incorporation and to study the optical properties. The demonstrated growth results reveal a low-pressure growth window to achieve high-quality and high Sn alloys for future device applications.

Low Pressure Mocvd Growth of InSb

1990 ◽  
Vol 216 ◽  
Author(s):  
B.T. Cunningham ◽  
R.P. Schneider ◽  
R.M. Biefeld
Keyword(s):  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Low Pressure ◽  
Lower Growth ◽  
Growth Pressure ◽  
Mocvd Growth ◽  
Partial Pressures ◽  
Low Pressure Mocvd ◽  
Sims Analysis

ABSTRACTLow pressure (200 Torr) metalorganic chemical vapor deposition (MOCVD) of InSb has been examined through variation of the Column III (TMIn) and Column V (TMSb or TESb) precursor partial pressures. The use of lower growth pressure significantly enhanced the range of allowable Column III and Column V partial pressures in which specular morphology InSb could be obtained without the formation of In droplets or Sb crystals. In addition, a 70% improvement in the average hole mobility was obtained, compared to InSb grown in the same reactor at atmospheric pressure. SIMS analysis revealed that Si at the substrate/epitaxial layer interface is an important impurity that may contribute to degradation of the mobility. Substitution of TESb for TMSb did not result in any improvement in the purity of the InSb.

Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition

2012 ◽  
Vol 711 ◽  
pp. 61-65 ◽  
Author(s):  
Sai Jiao ◽  
Marc Portail ◽  
Jean François Michaud ◽  
Marcin Zielinski ◽  
Thierry Chassagne ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Growth Conditions ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Micro Electro Mechanical Systems ◽  
Pressure Chemical

The growth of continuous silicon monocrystalline thin films on 3C-SiC epilayers deposited on silicon substrates is presented in this study. Such heterostructures can be beneficial for the fabrication of Micro Electro Mechanical Systems or electronic applications. The elaboration of these heterostructures was carried out using Low Pressure Chemical Vapor Deposition. X-ray Diffraction, Fourier Transformed Infra-Red spectroscopy and Scanning Electron Microscopy have been used to investigate the structural properties of Si epilayers and their dependence on growth conditions. Monocrystalline Si (110) films are obtained on 3CSiC(100)/Si (100) substrates, only when using growth temperatures close to 850°C. The strong influence of the underlying 3C-SiC film on the final structural properties of Si epilayer is evidenced.

Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InP

1992 ◽  
Vol 21 (2) ◽  
pp. 165-171 ◽  
Author(s):  
D. G. Knight ◽  
B. Emmerstorfer ◽  
G. Pakulski ◽  
C. Larocque ◽  
A. J. Springthorpe
Keyword(s):  
Low Pressure ◽  
High Quality ◽  
Mocvd Growth ◽  
Heterostructure Laser ◽  
Low Pressure Mocvd ◽  
Buried Heterostructure

Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers

1998 ◽  
Vol 264-268 ◽  
pp. 1145-1148 ◽  
Author(s):  
A. Strittmatter ◽  
A. Krost ◽  
K. Schatke ◽  
Y. Iseri ◽  
J. Bläsing ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Low Pressure Mocvd
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