Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III–V solar cell applications

2014 ◽  
Vol 393 ◽  
pp. 64-69 ◽  
Author(s):  
I. Garcia ◽  
R.M. France ◽  
J.F. Geisz ◽  
J. Simon
Keyword(s):  
Solar Cell ◽  
Growth Rates ◽  
High Growth ◽  
Buffer Layers ◽  
High Quality

Optical Properties of i-Layers as a Function of Growth Rate in Correlation to the Performance of a-Si:H Solar Cells

2002 ◽  
Vol 715 ◽  
Author(s):  
Keda Wang ◽  
Jessica M. Owens ◽  
Jennifer Weinberg-Wolf ◽  
Daxing Han ◽  
Lynn Gedvilas
Keyword(s):  
Growth Rate ◽  
Optical Properties ◽  
Hydrogen Bonding ◽  
Solar Cells ◽  
Solar Cell ◽  
Growth Rates ◽  
High Growth ◽  
Solar Cell Performance ◽  
Bonding Configuration ◽  
Small Absorption

Abstracta-Si:H intrinsic films and their solar cells were prepared by DC-PECVD with growth rates of 1, 3, and 10 Å/s. Raman, IR, and PL spectroscopies were used to study the i-layer properties in relation to the solar cell performance. Raman shows an identical TO mode for all the samples, which indicates the local silicon-bonding configuration does not change with the growth rate from 1 to 10 Å/s. IR results show that the hydrogen bonding configuration is monohydride (Si-H) dominated, and the hydrogen content obtained from the 630 cm-1 wagging mode is 12-14 at.%. Surprisingly, a very small absorption strength for the stretching 2000-2100 cm-1 mode was found for some samples deposited at the higher growth rates (3, 10 Å/s). For these same samples, the PL spectra exhibit a red shift. Both the IR and PL results might be related to the same microstructures formed at high growth rates. We found that although the properties of the i-layer varied as the growth rate increased from 1 to 10 Å/s, the performances of the cells were comparable (within about 4%).

High Quality a-Si:H Films Grown at High Deposition Rates

1999 ◽  
Vol 557 ◽  
Author(s):  
Yoram Lubianiker ◽  
Yanyang Tan ◽  
J. David Cohen ◽  
Gautam Ganguly
Keyword(s):  
Growth Rates ◽  
Defect Density ◽  
High Growth ◽  
Small Concentration ◽  
Considerable Reduction ◽  
Amorphous Films ◽  
High Quality ◽  
Deposition Rates

AbstractIntrinsic a-Si:H samples were grown with and without hydrogen (H2) dilution of silane at different growth rates. We find that the dilution leads to a considerable reduction in the defect density, in particular at high growth rates. The defect density is particularly low for samples grown using H2 dilution conditions at growth rates as high as 10 Å/sec. Using transient photocapacitance measurements we find evidence for a small concentration of microcrystallites embedded in the amorphous films. An increase in the microcrystalline fraction correlates with a decrease in the defect density.

High-quality SiGe films grown with compositionally graded buffer layers for solar cell applications

2013 ◽  
Vol 378 ◽  
pp. 226-229 ◽  
Author(s):  
Ryuji Oshima ◽  
Yoshinori Watanabe ◽  
Mitsuyuki Yamanaka ◽  
Hitoshi Kawanami ◽  
Isao Sakamoto ◽  
...  
Keyword(s):  
Solar Cell ◽  
Buffer Layers ◽  
High Quality

Organometallic vapor‐phase epitaxy of high‐quality Ga0.51In0.49P at high growth rates

1989 ◽  
Vol 66 (11) ◽  
pp. 5384-5387 ◽  
Author(s):  
D. S. Cao ◽  
A. W. Kimball ◽  
G. S. Chen ◽  
K. L. Fry ◽  
G. B. Stringfellow
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application

2000 ◽  
Vol 266-269 ◽  
pp. 380-384 ◽  
Author(s):  
B.A Korevaar ◽  
G.J Adriaenssens ◽  
A.H.M Smets ◽  
W.M.M Kessels ◽  
H.-Z Song ◽  
...  
Keyword(s):  
Solar Cell ◽  
Growth Rates ◽  
High Growth ◽  
Drift Mobility ◽  
Solar Cell Application

GROWTH OF PIKE-PERCH SANDER LUCIOPERCA (L., 1758) (PERCIDAE) IN RESERVOIRS OF K. SATPAYEV’S CHANNEL

2018 ◽  
pp. 59-68
Author(s):  
Saule Zhangirovna Asylbekova ◽  
Kuanysh Baibulatovich Isbekov ◽  
Vladimir Nickolaevich Krainyuk
Keyword(s):  
Growth Rates ◽  
Growth Dynamics ◽  
High Growth ◽  
Water Bodies ◽  
Volga River ◽  
Trophic Resources ◽  
Pike Perch ◽  
The Amur River ◽  
Back Calculation ◽  
Abiotic And Biotic Factors

Pike-perch is an invader for the water basins of Central Kazakhstan. These species have stable self-reproductive populations in the regional waters. Back calculation method was used to investigate pike-perch growth rates in reservoirs of K. Satpayev’s channel. For comparison, the data from the other water bodies (Vyacheslavsky and Sherubay-Nurinsky water reservoirs) were used, as well as literature data. Pike-perch species from the investigated waters don’t show high growth rates. The populations from the reservoirs of K. Satpayev’s channel have quite similar growth rates with populations from the Amur river, from a number of reservoirs in the Volga river basin and from the reservoir in Spain. Sexual differences in growth have not been observed. Evaluating possible influence of various abiotic and biotic factors on the growth rate of pike-perch in the reservoirs of K. Satpayev’s channel was carried out. It has been stated that the availability of trophic resources cannot play a key role in growth dynamics because of their high abundance. Morphology of water bodies also does not play a role, as well as chromaticity, turbidity and other optical water indicators. It can be supposed that the main factor influencing growth of pike perch is the habitat’s temperature. This factor hardly ever approaches optimal values for the species in reservoirs of K. Satpaev’s channel. The possible influence of fishing selectivity on pike-perch growth rates was also evaluated. Currently, there has been imposed a moratorium on pike-perch catch. However, pike-perch is found in by-catches and in catches of amateur fishermen. It should be said that such seizures have an insignificant role in the dynamics of growth rates.

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