Observation of defect structure in ScAlMgO4 crystal using X-ray topography

2021 ◽  
pp. 126477
Author(s):  
K. Ishiji ◽  
T. Fujii ◽  
T. Araki ◽  
T. Fukuda
Keyword(s):  
Defect Structure ◽  
X Ray

Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates

2015 ◽  
Vol 4 (8) ◽  
pp. P324-P330 ◽  
Author(s):  
L. Kirste ◽  
A. N. Danilewsky ◽  
T. Sochacki ◽  
K. Köhler ◽  
M. Zajac ◽  
...  
Keyword(s):  
Defect Structure ◽  
X Ray ◽  
White Beam ◽  
Topography Analysis

SEM Characterization of Silicon Layers Grown on Carbon Foil

2009 ◽  
Vol 156-158 ◽  
pp. 473-476 ◽  
Author(s):  
Sergei K. Brantov ◽  
A.V. Eltzov ◽  
Olga V. Feklisova ◽  
Eugene B. Yakimov
Keyword(s):  
Dislocation Density ◽  
Defect Structure ◽  
Growth Direction ◽  
Carbon Foil ◽  
Twin Boundaries ◽  
X Ray ◽  
Electron Backscattering Diffraction ◽  
Silicon Ribbon ◽  
Selective Chemical

Characterization of defect structure in silicon ribbon grown on carbon foil has been carried out. The structure of grown Si layers and a dislocation density in these layers have been studied using selective chemical etching and the Electron Backscattering Diffraction. It is observed that the layers consist of rather large grains, the majority of which is elongated along the growth direction with a similar surface orientation and with a misorientation angle between neighboring grains of 60º. This means that such grains are separated by the (111) twin boundaries. The dislocation density in different grains is found to vary from 102 to 107cm-2. The energy dispersive X-Ray microanalysis has shown that some twin boundaries are enriched with carbon.

scholarly journals Defect Structure of FexO and X-ray Diffuse Scattering

1977 ◽  
Vol 16 (1) ◽  
pp. 23-29
Author(s):  
Motozo Hayakawa ◽  
J.B. Cohen
Keyword(s):  
Defect Structure ◽  
Diffuse Scattering ◽  
X Ray

Changes in the defect structure of diamond due to high temperature+ high pressure treatment

1975 ◽  
Vol 344 (1636) ◽  
pp. 111-130 ◽  
Keyword(s):  
Electron Microscopy ◽  
High Pressure ◽  
High Temperature ◽  
Optical Absorption ◽  
Defect Structure ◽  
Pressure Treatment ◽  
High Pressure Treatment ◽  
X Ray ◽  
High Temperature High Pressure ◽  
Absorption Measurements

Type la and type IIa diamonds have been heated to temperatures in the range 2000-2300 °C under a pressure of about 4.8 GPa. The changes in the defect structure of these diamonds as a result of the heat treatm ent have been examined by optical absorption measurements, integrated X-ray spike measurements and by electron microscopy. Type la diamonds changed colour from colourless to yellow after being heated for 1 min in the temperature range 2250-2300 °C and it has been shown that the yellowing was due to scattering. The scattering centres responsible were elliptically shaped cracks in the cube planes with their longest dimension in a <110> direction

scholarly journals Influence of sintering temperature and pressure on crystallite size and lattice defect structure in nanocrystalline SiC

2007 ◽  
Vol 22 (5) ◽  
pp. 1314-1321 ◽  
Author(s):  
J. Gubicza ◽  
S. Nauyoks ◽  
L. Balogh ◽  
J. Labar ◽  
T.W. Zerda ◽  
...  
Keyword(s):  
Crystallite Size ◽  
Defect Structure ◽  
Sintering Temperature ◽  
Profile Analysis ◽  
Lattice Defect ◽  
Line Profile Analysis ◽  
Crystallite Growth ◽  
X Ray ◽  
Transmission Electron ◽  
Temperature And Pressure

Microstructure of sintered nanocrystalline SiC is studied by x-ray line profile analysis and transmission electron microscopy. The lattice defect structure and the crystallite size are determined as a function of pressure between 2 and 5.5 GPa for different sintering temperatures in the range from 1400 to 1800 °C. At a constant sintering temperature, the increase of pressure promotes crystallite growth. At 1800 °C when the pressure reaches 8 GPa, the increase of the crystallite size is impeded. The grain growth during sintering is accompanied by a decrease in the population of planar faults and an increase in the density of dislocations. A critical crystallite size above which dislocations are more abundant than planar defects is suggested.

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