Changes in the defect structure of diamond due to high temperature+ high pressure treatment

1975 ◽  
Vol 344 (1636) ◽  
pp. 111-130 ◽  
Keyword(s):  
Electron Microscopy ◽  
High Pressure ◽  
High Temperature ◽  
Optical Absorption ◽  
Defect Structure ◽  
Pressure Treatment ◽  
High Pressure Treatment ◽  
X Ray ◽  
High Temperature High Pressure ◽  
Absorption Measurements

Type la and type IIa diamonds have been heated to temperatures in the range 2000-2300 °C under a pressure of about 4.8 GPa. The changes in the defect structure of these diamonds as a result of the heat treatm ent have been examined by optical absorption measurements, integrated X-ray spike measurements and by electron microscopy. Type la diamonds changed colour from colourless to yellow after being heated for 1 min in the temperature range 2250-2300 °C and it has been shown that the yellowing was due to scattering. The scattering centres responsible were elliptically shaped cracks in the cube planes with their longest dimension in a <110> direction

Effect of High Pressure Treatment and Synthesis on Multiferroic Properties of 0.9BiFeO3-0.1SrTiO3 Ceramics

2014 ◽  
Vol 1082 ◽  
pp. 61-64
Author(s):  
Zheng Zheng Ma ◽  
Zi Peng Chen ◽  
Jian Qing Li ◽  
Hai Jun Huang
Keyword(s):  
High Pressure ◽  
Room Temperature ◽  
Single Phase ◽  
Pressure Treatment ◽  
X Ray Diffraction ◽  
High Pressure Treatment ◽  
X Ray ◽  
Multiferroic Properties ◽  
Pressure Synthesis ◽  
High Temperature High Pressure

The solid solution ceramics of 0.9BiFeO3-0.1SrTiO3 (BFST) were processed under cool-high pressure (BFST-H1, BFST-H2) and high temperature-high pressure (BFST-H3). And the high pressure synthesis with different temperature was used to prepare the sample BFST-H4 and BFST-H5. X-ray diffraction showed that these ceramics are almost of single phase. Among all the samples, the 3GPa,900°C high pressure synthesized one shows the optimal ferroelectricity at room temperature, with enhanced magnetic properties was observed.

scholarly journals Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γIrradiation and High Temperature-High Pressure Treatment

2008 ◽  
Vol 114 (2) ◽  
pp. 439-446 ◽  
Author(s):  
K. Wieteska ◽  
A. Misiuk ◽  
M. Prujszczyk ◽  
W. Wierzchowski ◽  
B. Surma ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Pressure Treatment ◽  
High Pressure Treatment ◽  
High Temperature High Pressure
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