scholarly journals Oxide layer characteristics and interfacial analysis of porcelain fused to high-gold alloy using multitechnique analysis methods

2017 ◽  
Vol 12 (4) ◽  
pp. 319-327 ◽  
Author(s):  
Hao-Sheng Chang ◽  
Yu-Chun Chiu ◽  
Chao-Sen Yang ◽  
Ming Chen
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.


2002 ◽  
Author(s):  
Eugene Laska ◽  
Morris Meisner ◽  
Carole Siegel ◽  
Joseph Wanderling

2012 ◽  
Author(s):  
Antonio P. Sanfilippo ◽  
Andrew J. Cowell ◽  
Michelle L. Gregory ◽  
Robert L. Baddeley ◽  
Patrick R. Paulson ◽  
...  
Keyword(s):  

2004 ◽  
Author(s):  
Roger A. Chadwick ◽  
Douglas J. Gillan ◽  
Dominic Simon ◽  
Skye Pazuchanics

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