Preparation and characterization of boron-doped corn straw biochar: Fe (Ⅱ) removal equilibrium and kinetics

2021 ◽  
Vol 106 ◽  
pp. 116-123
Author(s):  
Long Sui ◽  
Chunyu Tang ◽  
Qing Du ◽  
Ying Zhao ◽  
Kui Cheng ◽  
...  
2013 ◽  
Vol 283 ◽  
pp. 900-905 ◽  
Author(s):  
Jiangwei Lv ◽  
Yujie Feng ◽  
Junfeng Liu ◽  
Youpeng Qu ◽  
Fuyi Cui

2006 ◽  
Vol 17 (2) ◽  
pp. 257-264 ◽  
Author(s):  
Hugo B. Suffredini ◽  
Giancarlo R. Salazar-Banda ◽  
Sônia T. Tanimoto ◽  
Marcelo L. Calegaro ◽  
Sergio A. S. Machado ◽  
...  

1989 ◽  
Vol 28 (Part 1, No. 6) ◽  
pp. 1066-1071 ◽  
Author(s):  
Ken Okano ◽  
Hidetoshi Naruki ◽  
Yukio Akiba ◽  
Tateki Kurosu ◽  
Masamori Iida ◽  
...  

2004 ◽  
Vol 808 ◽  
Author(s):  
J. Gaspar ◽  
T. Adrega ◽  
V. Chu ◽  
J. P. Conde

ABSTRACTThis paper describes the fabrication and characterization of thin-film nanocrystalline silicon microresonators processed at temperatures below 110°C on glass substrates. The microelectromechanical structures consist of surface micromachined bridges of boron-doped hydrogenated nanocrystalline silicon (p+-nc-Si:H) deposited at 100°C by hot-wire chemical vapor deposition (HWCVD). The microbridges, which are suspended over an Al gate electrode, are electrostatically actuated and the mechanical resonance is detected in vacuum using an optical setup. The resonance frequency and energy dissipation in p+-nc-Si:H based resonators are studied as a function of the geometrical dimensions of the microstructures. Resonance frequencies between 700 kHz and 36 MHz and quality factors as high as 2000 are observed. A Young's modulus of 160 GPa for the structural bridge film is extracted from the experimental data using an electromechanical model and the main intrinsic energy dissipation mechanisms in nc-Si:H microresonators are discussed.


Cellulose ◽  
2018 ◽  
Vol 25 (6) ◽  
pp. 3241-3254 ◽  
Author(s):  
Shaoqi Yang ◽  
Xingmei Lu ◽  
Yaqin Zhang ◽  
Junli Xu ◽  
Jiayu Xin ◽  
...  

1997 ◽  
Vol 3 (S2) ◽  
pp. 701-702
Author(s):  
D. J. Larson ◽  
M. K. Miller

Two-phase α2+γ TiAl alloys with microalloying additions, Fig. 1, are of interest due to the high strength-to-weight ratio they can provide in automotive and aircraft applications. In boron-doped α2+γTiAl containing Cr, Nb, and W, the B levels were found to be significantly depleted below the nominal alloy content in both the α2 andγ phases. The boron solubilities in the γ and α2 phases were 0.011 ± 0.005 at. % B and 0.003 ± 0.005 at. % B, respectively in Ti-47% Al-2% Cr-1.8% Nb-0.2% W-0.15 % B that was aged for 2 h at 900°C (base alloy). The majority of the B was in a variety of borides including TiB, TiB2 and a Cr-enriched (Ti,Cr)2B precipitate. With the exception of the smaller (< 50 nm thick) Cr-enriched (Ti,Cr)2B precipitates, Fig. 2, most of the borides were larger than ∼100 nm. A significant proportion of the microalloying additions is in these borides, Table 1.


2002 ◽  
Vol 737 ◽  
Author(s):  
Wensha Yang ◽  
Orlando Auciello ◽  
James E. Butler ◽  
Wei Cai ◽  
John A. Carlisle ◽  
...  

ABSTRACTNanocrystalline diamond thin films of sub-micron thickness have been covalently modified with DNA oligonucleotides. Quantitative studies of hybridization of surface-bound oligonucleotides with fluorescently tagged complementary and non-complementary oligonucleotides were performed. The results show no detectable nonspecific adsorption, with extremely good selectivity between matched and mismatched sequences. Impedance spectroscopy measurements were made of DNA-modified boron-doped nanocrystalline diamond films. The results show that exposure to non-complementary sequences induce only small changes in impedance, while complementary DNA sequences produce a pronounced decrease in impedance. The combination of high stability, selectivity, and the ability to directly detect DNA hybridization via electrical means suggest that diamond may be an ideal substrate for continuously-monitoring biological sensors.


2013 ◽  
Vol 143 ◽  
pp. 512-518 ◽  
Author(s):  
Jiang-Tao Qiao ◽  
Yan-Ling Qiu ◽  
Xian-Zheng Yuan ◽  
Xiao-Shuang Shi ◽  
Xiao-Hui Xu ◽  
...  

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