scholarly journals Scaling limit of a directed polymer among a Poisson field of independent walks

2021 ◽  
Vol 281 (5) ◽  
pp. 109066
Author(s):  
Hao Shen ◽  
Jian Song ◽  
Rongfeng Sun ◽  
Lihu Xu
Author(s):  
Francesco Caravenna ◽  
Frank den Hollander

AbstractWe consider a directed polymer of length N interacting with a linear interface. The monomers carry i.i.d. random charges $$(\omega _i)_{i=1}^N$$ ( ω i ) i = 1 N taking values in $${\mathbb {R}}$$ R with mean zero and variance one. Each monomer i contributes an energy $$(\beta \omega _i-h)\varphi (S_i)$$ ( β ω i - h ) φ ( S i ) to the interaction Hamiltonian, where $$S_i \in {\mathbb {Z}}$$ S i ∈ Z is the height of monomer i with respect to the interface, $$\varphi :\,{\mathbb {Z}}\rightarrow [0,\infty )$$ φ : Z → [ 0 , ∞ ) is the interaction potential, $$\beta \in [0,\infty )$$ β ∈ [ 0 , ∞ ) is the inverse temperature, and $$h \in {\mathbb {R}}$$ h ∈ R is the charge bias parameter. The configurations of the polymer are weighted according to the Gibbs measure associated with the interaction Hamiltonian, where the reference measure is given by a Markov chain on $${\mathbb {Z}}$$ Z . We study both the quenched and the annealed free energy per monomer in the limit as $$N\rightarrow \infty $$ N → ∞ . We show that each exhibits a phase transition along a critical curve in the $$(\beta ,h)$$ ( β , h ) -plane, separating a localized phase (where the polymer stays close to the interface) from a delocalized phase (where the polymer wanders away from the interface). We derive variational formulas for the critical curves and we obtain upper and lower bounds on the quenched critical curve in terms of the annealed critical curve. In addition, for the special case where the reference measure is given by a Bessel random walk, we derive the scaling limit of the annealed free energy as $$\beta ,h \downarrow 0$$ β , h ↓ 0 in three different regimes for the tail exponent of $$\varphi $$ φ .


2002 ◽  
Vol 716 ◽  
Author(s):  
Parag C. Waghmare ◽  
Samadhan B. Patil ◽  
Rajiv O. Dusane ◽  
V.Ramgopal Rao

AbstractTo extend the scaling limit of thermal SiO2, in the ultra thin regime when the direct tunneling current becomes significant, members of our group embarked on a program to explore the potential of silicon nitride as an alternative gate dielectric. Silicon nitride can be deposited using several CVD methods and its properties significantly depend on the method of deposition. Although these CVD methods can give good physical properties, the electrical properties of devices made with CVD silicon nitride show very poor performance related to very poor interface, poor stability, presence of large quantity of bulk traps and high gate leakage current. We have employed the rather newly developed Hot Wire Chemical Vapor Deposition (HWCVD) technique to develop the a:SiN:H material. From the results of large number of optimization experiments we propose the atomic hydrogen of the substrate surface prior to deposition to improve the quality of gate dielectric. Our preliminary results of these efforts show a five times improvement in the fixed charges and interface state density.


2021 ◽  
Vol 965 ◽  
pp. 115337 ◽  
Author(s):  
Vladimir V. Bazhanov ◽  
Gleb A. Kotousov ◽  
Sergii M. Koval ◽  
Sergei L. Lukyanov
Keyword(s):  

Author(s):  
Joseph Najnudel ◽  
Bálint Virág

AbstractThe bead process introduced by Boutillier is a countable interlacing of the $${\text {Sine}}_2$$ Sine 2 point processes. We construct the bead process for general $${\text {Sine}}_{\beta }$$ Sine β processes as an infinite dimensional Markov chain whose transition mechanism is explicitly described. We show that this process is the microscopic scaling limit in the bulk of the Hermite $$\beta $$ β corner process introduced by Gorin and Shkolnikov, generalizing the process of the minors of the Gaussian Unitary and Orthogonal Ensembles. In order to prove our results, we use bounds on the variance of the point counting of the circular and the Gaussian beta ensembles, proven in a companion paper (Najnudel and Virág in Some estimates on the point counting of the Circular and the Gaussian Beta Ensemble, 2019).


2021 ◽  
Vol 2021 (7) ◽  
Author(s):  
Shouvik Datta ◽  
Yunfeng Jiang

Abstract We analyse the $$ T\overline{T} $$ T T ¯ deformation of 2d CFTs in a special double-scaling limit, of large central charge and small deformation parameter. In particular, we derive closed formulae for the deformation of the product of left and right moving CFT characters on the torus. It is shown that the 1/c contribution takes the same form as that of a CFT, but with rescalings of the modular parameter reflecting a state-dependent change of coordinates. We also extend the analysis for more general deformations that involve $$ T\overline{T} $$ T T ¯ , $$ J\overline{T} $$ J T ¯ and $$ T\overline{J} $$ T J ¯ simultaneously. We comment on the implications of our results for holographic proposals of irrelevant deformations.


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