Mutual intercropping-inspired co-silanization to graft well-oriented organosilane as adhesion promotion nanolayer for flexible conductors

2020 ◽  
Vol 83 ◽  
pp. 90-99 ◽  
Author(s):  
Yi-Hsuan Chen ◽  
Yi-Hsiang Lai ◽  
Ping-Heng Wu ◽  
Li-Syuan Chen ◽  
Yung-Sen Lin ◽  
...  
Keyword(s):  
2016 ◽  
Vol 52 (6) ◽  
pp. 515-519 ◽  
Author(s):  
H. Prakash ◽  
S. Bhowmik ◽  
G. Ajeesh ◽  
M. Thenarasu
Keyword(s):  

1999 ◽  
Vol 565 ◽  
Author(s):  
N. Ariel ◽  
M. Eizenberg ◽  
E. Y. Tzou

AbstractIn order to achieve better performance of devices, the interconnects RC delay time, the limiting factor of the device speed today, must be reduced. This calls for a new interconnect stack: lower resistivity Copper and low k materials (k<3) as dielectrics.Fluorinated amorphous carbon (a-F:C) prepared by HDP- CVD is an attractive candidate as a low-k material. In this work we have studied the film, its stability and its interface with Copper metallization. The high density plasma CVD process resulted in a film which contains C and F at a ratio of 1:0.6 as determined by Nuclear Reactions Analysis. XPS analysis of the Cls transition indicated four types of bonds: C-C, C-CF, CF, and CF2. X-ray diffraction as well as high resolution TEM analyses proved that the film was amorphous at least up to 500°C anneal. For various applications, the advantage of adding a thin bi-layer of a-SiC/SiOx for adhesion promotion purposes was demonstrated. In addition, the interface of a-F:C and the adhesion promoter layer with Ta, TaN and Cu was studied. No interdiffusion was observed by SIMS after 400°C annealing. 500°C annealing caused F outdiffusion from the film and Cu diffusion into the adhesion promoter layer.


2003 ◽  
Vol 137 (1-3) ◽  
pp. 871-872 ◽  
Author(s):  
Gernot Busch ◽  
Evelin Jaehne ◽  
Xuediao Cai ◽  
Sonia Oberoi ◽  
Hans-Juergen P. Adler

2017 ◽  
Vol 2017 (1) ◽  
pp. 000458-000463
Author(s):  
Michael Merschky ◽  
Fabian Michalik ◽  
Martin Thoms ◽  
Robin Taylor ◽  
Diego Reinoso-Cocina ◽  
...  

Abstract With the trends towards miniaturization and heterogeneous integration, both IC and advanced substrate manufacturers are striving to meet the needs of next generation platforms, to increase the density of interconnects, and generate conductors featuring finer lines and spaces. Advanced manufacturing technologies such as Semi-Additive-Processing (SAP) and Advanced Modified-Semi-Additive-Processing (amSAP) were devised, realized and implemented in order to meet these requirements. Line and space (L/S) requirements of copper conductors will be below 5/5μm for advanced substrates, with 2/2μm L/S required for chip to chip connections in the near future. Herein we report about the performance of the new developed ferric sulfate based EcoFlash™ process for SAP and amSAP application with the focus on glass as the substrate and VitroCoat as thin metal oxide adhesion promotion layer. The adhesion promotion layer (about 5–10 nm thickness) is dip-coated by a modified sol-gel process followed by sintering which creates chemical bonds to the glass. The sol-gel dip coating process offers good coating uniformity on both Though-Glass-Via (TGV) and glass surfaces under optimized coating conditions. Uniform coating can be achieved up to aspect ratios of 10:1 by using a 300μm thick glass with 30μm diameter TGV. The thin adhesive layer enables electroless and electrolytic copper plating directly onto glass substrates. Excellent adhesion of electroless plated copper seed layer on glass can be achieved by using the adhesive layer and annealing technology. The thin adhesive layer is non-conductive and can be easily removed from the area between circuit traces together with the electroless copper seed layer by etching with a ferric sulfate based process. We have successfully integrated the adhesion layer and electroless and electrolytic copper plating technologies into semi-additive process and seed layer etching capable producing L/S below 10 μm.


2015 ◽  
Vol 30 (3) ◽  
pp. 231-246 ◽  
Author(s):  
Zeinab R. Farag ◽  
Jörg F. Friedrich ◽  
Simone Krüger ◽  
Gundula Hidde ◽  
Moustapha E. Moustapha

1997 ◽  
Vol 101 (23) ◽  
pp. 4613-4619 ◽  
Author(s):  
Christian Ligoure ◽  
James L. Harden
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document