Adhesion promotion of thick polyphosphate-poly(allylamine) films onto polyolefin substrates by plasma polymers

2015 ◽  
Vol 30 (3) ◽  
pp. 231-246 ◽  
Author(s):  
Zeinab R. Farag ◽  
Jörg F. Friedrich ◽  
Simone Krüger ◽  
Gundula Hidde ◽  
Moustapha E. Moustapha
Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 459
Author(s):  
Zdeněk Krtouš ◽  
Lenka Hanyková ◽  
Ivan Krakovský ◽  
Daniil Nikitin ◽  
Pavel Pleskunov ◽  
...  

Plasma polymer films typically consist of very short fragments of the precursor molecules. That rather limits the applicability of most plasma polymerisation/plasma-enhanced chemical vapour deposition (PECVD) processes in cases where retention of longer molecular structures is desirable. Plasma-assisted vapour thermal deposition (PAVTD) circumvents this limitation by using a classical bulk polymer as a high molecular weight “precursor”. As a model polymer in this study, polylactic acid (PLA) has been used. The resulting PLA-like films were characterised mostly by X-ray photoelectron spectroscopy (XPS) and nuclear magnetic resonance (NMR) spectroscopy. The molecular structure of the films was found to be tunable in a broad range: from the structures very similar to bulk PLA polymer to structures that are more typical for films prepared using PECVD. In all cases, PLA-like groups are at least partially preserved. A simplified model of the PAVTD process chemistry was proposed and found to describe well the observed composition of the films. The structure of the PLA-like films demonstrates the ability of plasma-assisted vapour thermal deposition to bridge the typical gap between the classical and plasma polymers.


Author(s):  
Solmaz Saboohi ◽  
Bryan R. Coad ◽  
Robert D. Short ◽  
Andrew Michelmore ◽  
Hans J. Griesser

2016 ◽  
Vol 52 (6) ◽  
pp. 515-519 ◽  
Author(s):  
H. Prakash ◽  
S. Bhowmik ◽  
G. Ajeesh ◽  
M. Thenarasu
Keyword(s):  

1999 ◽  
Vol 565 ◽  
Author(s):  
N. Ariel ◽  
M. Eizenberg ◽  
E. Y. Tzou

AbstractIn order to achieve better performance of devices, the interconnects RC delay time, the limiting factor of the device speed today, must be reduced. This calls for a new interconnect stack: lower resistivity Copper and low k materials (k<3) as dielectrics.Fluorinated amorphous carbon (a-F:C) prepared by HDP- CVD is an attractive candidate as a low-k material. In this work we have studied the film, its stability and its interface with Copper metallization. The high density plasma CVD process resulted in a film which contains C and F at a ratio of 1:0.6 as determined by Nuclear Reactions Analysis. XPS analysis of the Cls transition indicated four types of bonds: C-C, C-CF, CF, and CF2. X-ray diffraction as well as high resolution TEM analyses proved that the film was amorphous at least up to 500°C anneal. For various applications, the advantage of adding a thin bi-layer of a-SiC/SiOx for adhesion promotion purposes was demonstrated. In addition, the interface of a-F:C and the adhesion promoter layer with Ta, TaN and Cu was studied. No interdiffusion was observed by SIMS after 400°C annealing. 500°C annealing caused F outdiffusion from the film and Cu diffusion into the adhesion promoter layer.


2003 ◽  
Vol 137 (1-3) ◽  
pp. 871-872 ◽  
Author(s):  
Gernot Busch ◽  
Evelin Jaehne ◽  
Xuediao Cai ◽  
Sonia Oberoi ◽  
Hans-Juergen P. Adler

Vacuum ◽  
2003 ◽  
Vol 70 (4) ◽  
pp. 505-509 ◽  
Author(s):  
I Kholodkov

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