scholarly journals Fabrication of High Voltage Gradient ZnO nanoparticle-Bi2O3-Mn2O3 -Based Thick Film Varistors at Various Sintering Temperature

2022 ◽  
pp. 101820
Author(s):  
Rabab Khalid Sendi
Keyword(s):  
Thick Film ◽  
High Voltage ◽  
Sintering Temperature ◽  
Voltage Gradient ◽  
Zno Nanoparticle

Study on Microstructure of ZnO Lighting Arrester with High Voltage Gradient

2011 ◽  
Vol 415-417 ◽  
pp. 1070-1073
Author(s):  
Mo He ◽  
Qi Bin Liu ◽  
Chang Qi Xia
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
High Voltage ◽  
Sintering Temperature ◽  
Holding Time ◽  
Experimental Results ◽  
Voltage Gradient ◽  
Volume Method ◽  
Mass Volume

To obtain ZnO arrester with high voltage gradient and small size, through the optimizing foundamental formula of arrester and changing sintering temperature and holding time, the electrical properties and microstructure of varistors were studied. The density of varistors was determined by using the mass - volume method , voltage gradient and leakage current of ZnO arrester were measured with Ⅱ Surge Arrester Tester DC parameters, microstructure of varistor ceramics were studied by means XRD and SEM. The experimental results show that with increasement of the sintering temperature, the density of varistors increases, and the voltage gradient continues to decrease and leakage current almost keeps unchangable. As the holding time increases, while as the voltage gradient continues to decrease, and leakage current almost unchanges.

Impact of sintering temperatures on conduction behaviors of ZnO nanoparticles- and MnO-doped SnO2-based thick film varistors obtained by screen printing

2019 ◽  
Vol 33 (27) ◽  
pp. 1950336
Author(s):  
Rabab Sendi
Keyword(s):  
Electrical Properties ◽  
Thick Film ◽  
Zno Nanoparticles ◽  
Screen Printing ◽  
Sintering Temperature ◽  
Dissipation Factor ◽  
Breakdown Field ◽  
Zno Nanoparticle ◽  
Sintering Process ◽  
Low Dissipation

In this study, ZnO nanoparticles and MnO-doped SnO2-based thick film varistors (TFVs) were fabricated using screen printing technique. The sintering temperature had significant impact on the SZM-based TFVs, especially in terms of grain growth, even at a low sintering temperature of 1100[Formula: see text]C. The strong solid-state reaction during sintering may be attributed to the large surface area of the 20 nm ZnO nanoparticles that promoted strong surface reaction even at low sintering temperatures. Moreover, the X-ray diffraction lattice constant and full wave at half maximum data indicated that the sintering process also improved the grain crystallinity with the decrease in intrinsic compressive stress. The sintering temperatures also significantly influenced the electrical properties of the SZM-based TFVs with a significant decrease in the breakdown field from 360 V/mm (sample at 1100[Formula: see text]C) to 158 V/mm (sample at 1250[Formula: see text]C). The grain boundary resistance ([Formula: see text] also experienced a dramatic drop from 266.4 k[Formula: see text] (sample at 1100[Formula: see text]C) to 89.46 k[Formula: see text] (sample at 1250[Formula: see text]C). The sample sintered at 1200[Formula: see text]C exhibited superior electrical behaviors with a nonlinear exponent of 61 and leakage current of 115 [Formula: see text]A. Furthermore, it achieved high permittivity and low dissipation factor at the low frequency range. The conduction behaviors of [Formula: see text] ions with activation energy of approximately 0.6 eV was dominated by decreasing [Formula: see text] and [Formula: see text] defects (around 0.4 eV) with increasing sintering temperature. Therefore, the sintering process can be applied to control the conduction behaviors of SZM-based TFVs doped with ZnO nanoparticle powder and achieve improved structural and electrical properties with good nonlinear behaviors.

Effect of Sintering Temperature on Electrical Properties of ZnO Varistor Ceramics

2012 ◽  
Vol 442 ◽  
pp. 31-34
Author(s):  
Chang Qi Xia ◽  
Qi Bin Liu ◽  
Mo He
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Leakage Current ◽  
High Voltage ◽  
Sintering Temperature ◽  
Voltage Gradient ◽  
Varistor Ceramic ◽  
Zno Varistor ◽  
Zno Varistors ◽  
Ceramic Sintering

To obtain ZnO varistors with high voltage gradient, ZnO varistors were fabricated by traditional ceramic sintering technique, the effect of different sintering temperature (1135～1155 °C) on electrical properties of ZnO varistors were investigated. The experimental results show that with increasement of sintering temperature, the grain size of ZnO varistor ceramic becomes bigger, the voltage gradient of varistor decreases and the density is improved. When the sintering temperature is at 1135 °C, the voltage gradient of varistor is up to 329V/mm, the leakage current is 8μA and the density is 96.4%. When the sintering temperature is at 1140 °C, the voltage gradient of varistor is 301V/mm, the leakage current is 4μA and the density is 96.6%. Compared the results at 1135 °C with 1140 °C , it is found that the comprehensive electrical properties of ZnO varistors reach maximum at 1140 °C.

Effects of SiO2/Cr2O3 ratios on microstructures and electrical properties of high voltage gradient ZnO varistors

2019 ◽  
Vol 30 (13) ◽  
pp. 12113-12121 ◽  
Author(s):  
Xuejun Ruan ◽  
Xin Ren ◽  
Wenting Zhou ◽  
Xi Xu ◽  
Xin Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Voltage ◽  
Voltage Gradient ◽  
Zno Varistors

LiNi0.5Mn1.5O4 thick-film electrodes prepared by electrophoretic deposition for use in high voltage lithium-ion batteries

2006 ◽  
Vol 158 (1) ◽  
pp. 583-590 ◽  
Author(s):  
A. Caballero ◽  
L. Hernán ◽  
M. Melero ◽  
J. Morales ◽  
R. Moreno ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Thick Film ◽  
High Voltage ◽  
Electrophoretic Deposition ◽  
Lithium Ion

PREPARING DOUBLE-BASE THERMO-SENSITIVE CERAMICS WITH NANOPOWDERS

2006 ◽  
Vol 05 (02n03) ◽  
pp. 265-271
Author(s):  
MENG KUI WANG ◽  
YU QIANG YANG
Keyword(s):  
Ceramic Material ◽  
Thick Film ◽  
Production Cost ◽  
Sintering Temperature ◽  
Precipitation Method ◽  
Sensitive Material ◽  
Surface Active Agents ◽  
Surface Active ◽  
Co Precipitation ◽  
Double Base

The preparing process and the properties of thick-film double-based thermo-sensitive material were studied. The preparing steps were as follows: (i) preparing Ba 1-x Sr x TiO 3 micro-powders with chemical co-precipitation method; (ii) adding dispersants and surface active agents into crushing medium powders to prepare Ba 1-x Sr x TiO 3 nanopowders; (iii) preparing V 2 O 3-based micro-powders; (iv) mixing Ba 1-x Sr x TiO 3 nanopowders, V 2 O 3-based micro-powders, donor impurities, acceptor impurities and micro additives according to a certain ratio to make thick-film thermo-sensitive ceramic material. The presintering and sintering temperature of the prepared PTC ceramics were both reduced, which is very meaningful in using cheaper SiC instead of more expensive MoSi 2, prolonging the kiln's life, and lowering the production cost. The samples we prepared did not contain PbO , so they are safe to the environment.

Effect of Technological Parameters on the Microstructure and Electrical Properties of ZnO Varistors

2013 ◽  
Vol 820 ◽  
pp. 208-211
Author(s):  
Li Li ◽  
Qi Bin Liu
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Leakage Current ◽  
Sintering Temperature ◽  
Voltage Gradient ◽  
Technological Parameters ◽  
Reaction Route ◽  
Conventional Solid State Reaction ◽  
Zno Varistors ◽  
Solid State Reaction Route

To improve voltage-gradient and to reduce the sintering temperature of ZnO varistors, high voltage-gradient ZnO varistors were synthesized with a conventional solid state reaction route. By means of SEM and DC parameter instrument for varistor, the influence of different technological parameters on microstructure, voltage-gradient and leakage current of ZnO varistors was investigated. The experimental results show that by using the process that presintering the additives at 850°C, the density is improved, the voltage-gradient is increased, and the leakage current is decreased. The optimum voltage-gradient and leakage current are 371V/mm and 3μA, respectively.

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