Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dots

2013 ◽  
Vol 137 ◽  
pp. 22-27 ◽  
Author(s):  
Flavio Franchello ◽  
Leonardo D. de Souza ◽  
Edson Laureto ◽  
Alain A. Quivy ◽  
Ivan F.L. Dias ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
Bimodal Distribution ◽  
Photoluminescence Spectra ◽  
Self Assembled

scholarly journals Resonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots

2002 ◽  
Vol 737 ◽  
Author(s):  
T. A. Nguyen ◽  
S. Mackowski ◽  
H. Rho ◽  
H. E. Jackson ◽  
L. M. Smith ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
Ground State ◽  
State Transition ◽  
Longitudinal Optical ◽  
Photoluminescence Spectra ◽  
Single Quantum Dots ◽  
Major Carrier ◽  
Excitation Mechanisms ◽  
Self Assembled

ABSTRACTWe show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state – ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state – ground state relaxation is important for all dots in ensemble, while phonon-assisted processes are dominant for the dots with smaller lateral size.

Polarization Spectroscopy of Charged Single Self-Assembled Quantum Dots

2003 ◽  
Vol 789 ◽  
Author(s):  
Morgan E. Ware ◽  
Allan Bracker ◽  
Daniel Gammon ◽  
David Gershoni
Keyword(s):  
Quantum Dots ◽  
Circular Polarization ◽  
Schottky Diode ◽  
Heavy Hole ◽  
Photoluminescence Spectra ◽  
Polarization Spectroscopy ◽  
Charged Exciton ◽  
Self Assembled ◽  
Positively Charged

ABSTRACTWe have demonstrated single dot spectroscopy of InAs/GaAs self-assembled quantum dots embedded in a bias controlled Schottky diode. The photoluminescence spectra exhibit discrete lines depending on bias, which we attribute to the recombination of positively charged, neutral, and negatively charged confined excitons. With excitation directly into the dot, large circular polarization memory is exhibited by the two charged exciton (trion) lines. This indicates long spin lifetimes for both the electron and the heavy hole in the quantum dots.

scholarly journals Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

2006 ◽  
Vol 498 (1-2) ◽  
pp. 188-192 ◽  
Author(s):  
Ling Min Kong ◽  
Jia Fa Cai ◽  
Zheng Yun Wu ◽  
Zheng Gong ◽  
Zhi Chuan Niu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Spectra ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence

Excited-state Transitions of Self-assembled InAs/InAlGaAs Quantum Dots

2011 ◽  
Vol 59 (6) ◽  
pp. 3391-3395 ◽  
Author(s):  
Kwanjae Lee ◽  
Byounggu Jo ◽  
Cheul-Ro Lee ◽  
Jin Soo Kim ◽  
Jong Su Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
State Transitions ◽  
Self Assembled

scholarly journals Pressure dependence of photoluminescence spectra of self-assembled InAs/GaAs quantum dots

2003 ◽  
Vol 235 (2) ◽  
pp. 496-500 ◽  
Author(s):  
F.J. Manjón ◽  
A.R. Goñi ◽  
K. Syassen ◽  
F. Heinrichsdorff ◽  
C. Thomsen
Keyword(s):  
Quantum Dots ◽  
Pressure Dependence ◽  
Photoluminescence Spectra ◽  
Self Assembled

Probing the excited state distributions of CdTe∕ZnTe self-assembled quantum dots using resonant Raman scattering

2005 ◽  
Vol 87 (18) ◽  
pp. 183104 ◽  
Author(s):  
A. Abdi ◽  
T. B. Hoang ◽  
S. Mackowski ◽  
L. M. Smith ◽  
H. E. Jackson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
Raman Scattering ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Self Assembled

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

1999 ◽  
Vol 588 ◽  
Author(s):  
X. C. Wang ◽  
S. J. Chua ◽  
S. J. Xu ◽  
Z. H. Zhang
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
High Resolution ◽  
Thermal Treatment ◽  
Ground State ◽  
Infrared Detectors ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled

AbstractIn this paper, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescence linewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size-distribution of the QDs. Large blue-shift of the energy positions of both emissions was also observed. High resolution X-Ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembled QDs.

scholarly journals Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field

2001 ◽  
Vol 63 (7) ◽  
Author(s):  
Ivan V. Ignatiev ◽  
Igor E. Kozin ◽  
Valentin G. Davydov ◽  
Selvakumar V. Nair ◽  
Jeong-Sik Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Photoluminescence Spectra ◽  
Self Assembled
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