Polarization Spectroscopy of Charged Single Self-Assembled Quantum Dots

2003 ◽  
Vol 789 ◽  
Author(s):  
Morgan E. Ware ◽  
Allan Bracker ◽  
Daniel Gammon ◽  
David Gershoni

ABSTRACTWe have demonstrated single dot spectroscopy of InAs/GaAs self-assembled quantum dots embedded in a bias controlled Schottky diode. The photoluminescence spectra exhibit discrete lines depending on bias, which we attribute to the recombination of positively charged, neutral, and negatively charged confined excitons. With excitation directly into the dot, large circular polarization memory is exhibited by the two charged exciton (trion) lines. This indicates long spin lifetimes for both the electron and the heavy hole in the quantum dots.

2003 ◽  
Vol 799 ◽  
Author(s):  
Morgan E. Ware ◽  
Allan Bracker ◽  
Daniel Gammon ◽  
David Gershoni

ABSTRACTWe have demonstrated single dot spectroscopy of InAs/GaAs self-assembled quantum dots embedded in a bias controlled Schottky diode. The photoluminescence spectra exhibit discrete lines depending on bias, which we attribute to the recombination of positively charged, neutral, and negatively charged confined excitons. With excitation directly into the dot, large circular polarization memory is exhibited by the two charged exciton (trion) lines. This indicates long spin lifetimes for both the electron and the heavy hole in the quantum dots.


2003 ◽  
Vol 794 ◽  
Author(s):  
Morgan E. Ware ◽  
Allan Bracker ◽  
Daniel Gammon ◽  
David Gershoni

ABSTRACTWe have demonstrated single dot spectroscopy of InAs/GaAs self-assembled quantum dots embedded in a bias controlled Schottky diode. The photoluminescence spectra exhibit discrete lines depending on bias, which we attribute to the recombination of positively charged, neutral, and negatively charged confined excitons. With excitation directly into the dot, large circular polarization memory is exhibited by the two charged exciton (trion) lines. This indicates long spin lifetimes for both the electron and the heavy hole in the quantum dots.


2020 ◽  
Vol 62 (11) ◽  
pp. 1816
Author(s):  
С.В. Некрасов ◽  
Ю.Г. Кусраев ◽  
И.А. Акимов ◽  
L. Langer ◽  
M. Kotur ◽  
...  

The dynamics of the photoluminescence negative circular polarization of the InP/(In,Ga)P quantum dots ensemble was studied. We find that in the time-resolved dependences of the polarization there are no oscillations in Voigt magnetic field. Also, with increasing field the polarization declines to zero. Such behavior is attributed to the peculiarities of the negatively charged exciton spin dynamics, particularly, to the fact that in the negatively charged exciton ground state the spin dynamics is governed by the heavy hole. We show that magnetic field depolarization of the photoluminescence occurs once the field of dynamically polarized nuclear spins acting on electron spins is surpassed.


2007 ◽  
Vol 06 (05) ◽  
pp. 319-322
Author(s):  
J. FÜRST ◽  
H. PASCHER ◽  
V. A. SHALYGIN ◽  
L. E. VOROBJEV ◽  
D. A. FIRSOV ◽  
...  

Polarized photoluminescence from InAs / GaAs self-assembled quantum dots has been investigated under continuous wave excitation by circularly polarized light. Depolarization of the photoluminescence in a magnetic field perpendicular to the wavevector of the exciting light (Hanle effect) was studied. For n-doped, undoped and p-doped quantum dots the observed Hanle curves exhibit qualitatively different shapes: single-, bi-, and tri-Lorentzian, respectively. In the two latter cases the complicated shape of the Hanle curve is attributed to the different processes of radiative recombination which take place simultaneously. Recombination of uncharged excitons and recombination of positively charged exciton complexes are considered. Corresponding spin lifetimes are determined.


2002 ◽  
Vol 737 ◽  
Author(s):  
T. A. Nguyen ◽  
S. Mackowski ◽  
H. Rho ◽  
H. E. Jackson ◽  
L. M. Smith ◽  
...  

ABSTRACTWe show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state – ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state – ground state relaxation is important for all dots in ensemble, while phonon-assisted processes are dominant for the dots with smaller lateral size.


2006 ◽  
Vol 89 (4) ◽  
pp. 043107 ◽  
Author(s):  
P. A. Dalgarno ◽  
J. McFarlane ◽  
B. D. Gerardot ◽  
R. J. Warburton ◽  
K. Karrai ◽  
...  

2013 ◽  
Vol 137 ◽  
pp. 22-27 ◽  
Author(s):  
Flavio Franchello ◽  
Leonardo D. de Souza ◽  
Edson Laureto ◽  
Alain A. Quivy ◽  
Ivan F.L. Dias ◽  
...  

2006 ◽  
Vol 498 (1-2) ◽  
pp. 188-192 ◽  
Author(s):  
Ling Min Kong ◽  
Jia Fa Cai ◽  
Zheng Yun Wu ◽  
Zheng Gong ◽  
Zhi Chuan Niu ◽  
...  

2003 ◽  
Vol 235 (2) ◽  
pp. 496-500 ◽  
Author(s):  
F.J. Manjón ◽  
A.R. Goñi ◽  
K. Syassen ◽  
F. Heinrichsdorff ◽  
C. Thomsen

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