TOF SIMS analysis, structure and photoluminescence properties of pulsed laser deposited CaS:Eu2+ thin films

2015 ◽  
Vol 167 ◽  
pp. 172-178 ◽  
Author(s):  
R.L. Nyenge ◽  
S.K.K. Shaat ◽  
L.L. Noto ◽  
P.P. Mokoena ◽  
H.C. Swart ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Photoluminescence Properties ◽  
Tof Sims ◽  
Sims Analysis

Structural and photoluminescence properties of Zn0.8Mg0.2O thin films grown on Si substrate by pulsed laser deposition

2004 ◽  
Vol 458 (1-2) ◽  
pp. 161-164 ◽  
Author(s):  
Yinzhu Zhang ◽  
Junhui He ◽  
Zhizhen Ye ◽  
Lu Zou ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Photoluminescence Properties ◽  
Si Substrate

scholarly journals ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1035 ◽  
Author(s):  
Alireza M. Kia ◽  
Nora Haufe ◽  
Sajjad Esmaeili ◽  
Clemens Mart ◽  
Mikko Utriainen ◽  
...  
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
3D Analysis ◽  
Tof Sims ◽  
Before And After ◽  
Sims Analysis

For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO2 thin films.

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