ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO2 thin films.

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Atomic Layer Deposition of GdCoO3 and Gd0.9Ca0.1CoO3

Materials ◽

10.3390/ma13010024 ◽

2019 ◽

Vol 13 (1) ◽

pp. 24

Author(s):

Marion Duparc ◽

Henrik Hovde Sønsteby ◽

Ola Nilsen ◽

Anja Olafsen Sjåstad ◽

Helmer Fjellvåg

Keyword(s):

Thin Films ◽

Aspect Ratio ◽

Atomic Layer Deposition ◽

High Aspect Ratio ◽

High Surface ◽

High Surface Area ◽

Atomic Layer ◽

Oxidation Catalysis ◽

Post Annealing ◽

Layer Deposition

Thin films of the catalytically interesting ternary and quaternary perovskites GdCoO3 and Gd0.9Ca0.1CoO3 are fabricated by atomic layer deposition using metal β-diketonates and ozone as precursors. The resulting thin films are amorphous as deposited and become single-oriented crystalline on LaAlO3(100) and YAlO3(100/010) after post-annealing at 650 °C in air. The crystal orientations of the films are tunable by choice and the orientation of the substrate, mitigated through the interface via solid face epitaxy upon annealing. The films exhibit no sign of Co2+. Additionally, high-aspect-ratio Si(100) substrates were used to document the suitability of the developed process for the preparation of coatings on more complex, high-surface-area structures. We believe that coatings of GdCoO3 and Gd1−xCaxCoO3 may find applications within oxidation catalysis.

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Analytical Model for Atomic-Layer Deposition of Thin Films on the Walls of Cylindrical Holes with a Relatively High Aspect Ratio

Technical Physics ◽

10.1134/s1063784218080054 ◽

2018 ◽

Vol 63 (8) ◽

pp. 1228-1235

Author(s):

A. V. Fadeev ◽

K. V. Rudenko

Keyword(s):

Thin Films ◽

Aspect Ratio ◽

Atomic Layer Deposition ◽

Analytical Model ◽

High Aspect Ratio ◽

Atomic Layer ◽

Layer Deposition ◽

Cylindrical Holes

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Thin Films of Cobalt Oxide Deposited on High Aspect Ratio Supports by Atomic Layer Deposition

Chemical Vapor Deposition ◽

10.1002/cvde.201006891 ◽

2011 ◽

Vol 17 (4-6) ◽

pp. 135-140 ◽

Cited By ~ 38

Author(s):

Madeleine Diskus ◽

Ola Nilsen ◽

Helmer Fjellvåg

Keyword(s):

Thin Films ◽

Aspect Ratio ◽

Atomic Layer Deposition ◽

Cobalt Oxide ◽

High Aspect Ratio ◽

Atomic Layer ◽

Layer Deposition

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Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels

Physical Chemistry Chemical Physics ◽

10.1039/d0cp03358h ◽

2020 ◽

Vol 22 (40) ◽

pp. 23107-23120

Author(s):

Jihong Yim ◽

Oili M. E. Ylivaara ◽

Markku Ylilammi ◽

Virpi Korpelainen ◽

Eero Haimi ◽

...

Keyword(s):

Thin Films ◽

Aspect Ratio ◽

Atomic Layer Deposition ◽

Aluminum Oxide ◽

High Aspect Ratio ◽

Atomic Layer ◽

Future Studies ◽

Layer Deposition ◽

Rectangular Channels ◽

Saturation Profiles

Thin films by atomic layer deposition (ALD) raise global interest through unparalleled conformality. Saturation profiles of the archetypical trimethylaluminum-water ALD process in narrow rectangular channels create a benchmark for future studies.

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