Experiment and theoretical prediction for surface roughness of PV polycrystalline silicon wafer in electroplated diamond wire sawing

2020 ◽  
Vol 49 ◽  
pp. 82-93 ◽  
Author(s):  
Xinying Li ◽  
Yufei Gao ◽  
Youkang Yin ◽  
Liyuan Wang ◽  
Tianzhao Pu
Keyword(s):  
Surface Roughness ◽  
Theoretical Prediction ◽  
Silicon Wafer ◽  
Polycrystalline Silicon ◽  
Diamond Wire ◽  
Diamond Wire Sawing

INFLUENCE OF DIAMOND WIRE SAWING PARAMETERS ON SUBSURFACE MICROCRACKS FORMATION IN MONOCRYSTALLINE SILICON WAFER

2019 ◽  
Author(s):  
Erick Cardoso Costa ◽  
Caroline Piesanti dos Santos ◽  
Fabio Antonio Xavier ◽  
Walter Lindolfo Weingaertner
Keyword(s):  
Silicon Wafer ◽  
Monocrystalline Silicon ◽  
Diamond Wire ◽  
Diamond Wire Sawing

Three-dimensional topography simulation research of diamond-wire sawing based on MATLAB

2019 ◽  
Vol 72 (3) ◽  
pp. 325-331
Author(s):  
Ligang Zhao ◽  
Guofeng Xia ◽  
Yuhu Shi ◽  
Aisheng Wu
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Three Dimensional ◽  
Processing Parameters ◽  
Feed Speed ◽  
Machining Parameters ◽  
Content Type ◽  
Diamond Wire ◽  
Wire Saw ◽  
Diamond Wire Sawing

Purpose The purpose of this paper is to study the influence of the processing parameters of diamond wire sawing on surface morphology and roughness. Design/methodology/approach First, a wire saw cutting model is established to determine the positional relationship between a wire saw and the machined surface of the workpiece, and the abrasive grain cutting trajectory is generated. Through the data processing of the cutting trajectory, the simulation of the three-dimensional surface topography of the slice and the calculation of the surface roughness are realized by using the GUI programming of MATLAB. Finally, different surface roughness values are obtained by changing the machining parameters (saw wire speed and workpiece feed speed). Findings The conclusion is that the surface roughness of the slice is larger when the feed speed is higher and smaller when the linear speed is higher. Originality/value Diamond wire saw cutting is the first process of chip processing, and its efficiency and quality have an important impact on subsequent processing. This paper will focus on the influence of the sawing wire cutting processing parameters (sawing wire speed and workpiece feed speed) on the surface roughness to optimize the processing parameters and obtain smaller surface roughness values. Through MATLAB three-dimensional simulation, the surface morphology can be observed more intuitively, which provides a theoretical basis for improving the processing quality.

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

2021 ◽  
pp. 095440622098384
Author(s):  
Mayank Srivastava ◽  
Pulak M Pandey
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Flow Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Slurry Flow ◽  
Magnetorheological Finishing ◽  
Finishing Process ◽  
Process Factors ◽  
Slurry Flow Rate

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

scholarly journals Simulation of the ductile machining mode of silicon

2021 ◽  
Author(s):  
Hagen Klippel ◽  
Stefan Süssmaier ◽  
Matthias Röthlin ◽  
Mohamadreza Afrasiabi ◽  
Uygar Pala ◽  
...  
Keyword(s):  
Brittle Material ◽  
Material Removal ◽  
Machining Process ◽  
Ductile Material ◽  
Diamond Wire ◽  
Ductile Machining ◽  
Mesh Free ◽  
Diamond Wire Sawing ◽  
Material Removal Mode ◽  
Brittle Material Removal

AbstractDiamond wire sawing has been developed to reduce the cutting loss when cutting silicon wafers from ingots. The surface of silicon solar cells must be flawless in order to achieve the highest possible efficiency. However, the surface is damaged during sawing. The extent of the damage depends primarily on the material removal mode. Under certain conditions, the generally brittle material can be machined in ductile mode, whereby considerably fewer cracks occur in the surface than with brittle material removal. In the presented paper, a numerical model is developed in order to support the optimisation of the machining process regarding the transition between ductile and brittle material removal. The simulations are performed with an GPU-accelerated in-house developed code using mesh-free methods which easily handle large deformations while classic methods like FEM would require intensive remeshing. The Johnson-Cook flow stress model is implemented and used to evaluate the applicability of a model for ductile material behaviour in the transition zone between ductile and brittle removal mode. The simulation results are compared with results obtained from single grain scratch experiments using a real, non-idealised grain geometry as present in the diamond wire sawing process.

Observation in the Surface Roughness of Silicon Wafer during Semi-Fixed Abrasive Machining with Large Grains

2009 ◽  
Vol 69-70 ◽  
pp. 253-257
Author(s):  
Ping Zhao ◽  
Jia Jie Chen ◽  
Fan Yang ◽  
K.F. Tang ◽  
Ju Long Yuan ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Quality ◽  
Silicon Wafer ◽  
Processing Parameters ◽  
Wafer Surface ◽  
Abrasive Machining ◽  
Fixed Abrasive ◽  
Is Failure ◽  
Better Than

Semi-fixed abrasive is a novel abrasive. It has a ‘trap’ effect on the hard large grains that can prevent defect effectively on the surface of the workpiece which is caused by large grains. In this paper, some relevant experiments towards silicon wafers are carried out under the different processing parameters on the semi-fixed abrasive plates, and 180# SiC is used as large grains. The processed workpieces’ surface roughness Rv are measured. The experimental results show that the surface quality of wafer will be worse because of higher load and faster rotating velocity. And it can make a conclusion that the higher proportion of bond of the plate, the weaker of the ‘trap’ effect it has. Furthermore the wet environment is better than dry for the wafer surface in machining. The practice shows that the ‘trap’ effect is failure when the workpiece is machined by abrasive plate which is 4.5wt% proportion of bond in dry lapping.

Sign in / Sign up

Export Citation Format

Share Document