Study on new method and mechanism of microcutting-etching of microlens array on 6H-SiC mold by combining single point diamond turning with ion beam etching

2020 ◽  
Vol 278 ◽  
pp. 116510 ◽  
Author(s):  
Tianfeng Zhou ◽  
Ruzhen Xu ◽  
Benshuai Ruan ◽  
Yupeng He ◽  
Zhiqiang Liang ◽  
...  
1998 ◽  
Author(s):  
Xinyu Zhang ◽  
Xinjian Yi ◽  
Miao He ◽  
Xing-Rong Zhao

2013 ◽  
Vol 401-403 ◽  
pp. 942-945
Author(s):  
Cheng Jun Guo ◽  
Ning Pei ◽  
Da Sen Wang ◽  
Feng Ming Nie ◽  
Guang Ping Zhang ◽  
...  

The appropriate planarization layer is the foundation for realization of ion beam deposition correction polishing technology, the significant difference between ion beam deposition correction polishing technology and ordinary ion beam polishing, is using spin or methods of ion beam sputtering deposition, forming sediments which has planarization effect on the processing surface to reduce intermediate frequency error, coupled with ion beam polishing, removing the high-frequency processing error, the typical error is cut marks by single point diamond turning left on the component surface.


Optik ◽  
2018 ◽  
Vol 172 ◽  
pp. 540-544 ◽  
Author(s):  
Yuetian Huang ◽  
Bin Fan ◽  
Yongjian Wan ◽  
Shijie Li

Polymers ◽  
2020 ◽  
Vol 12 (10) ◽  
pp. 2213
Author(s):  
Lihua Li ◽  
Hau Chung Wong ◽  
Rong Bin Lee

In this study, a novel nanodroplet cutting fluid (NDCF), consisting of emulsified water and oil nanodroplets, was developed to improve the surface quality of the single-point diamond-turned optical polymers. This developed NDCF was able to penetrate the chip–tool interface, contributing to both cooling and lubricating effects. The performance of NDCF was evaluated from perspectives of the surface irregularity, roughness, and cutting force of the machined groove in a series of taper cutting experiments. Meanwhile, a high-quality optical surface was obtained and the micro-level form error was reduced in the diamond turning of a Polymethylmethacrylate (PMMA) microlens array.


Author(s):  
M. Ulitschka ◽  
J. Bauer ◽  
F. Frost ◽  
T. Arnold

AbstractIon beam finishing techniques of aluminium mirrors have a high potential to meet the increasing demands on applications of high-performance mirror devices for visible and ultraviolet spectral range. Reactively driven ion beam machining using oxygen and nitrogen gases enables the direct figure error correction up to 1 μm machining depth while preserving the initial roughness. However, the periodic turning mark structures, which result from preliminary device shaping by single-point diamond turning, often limit the applicability of mirror surfaces in the short-periodic spectral range. Ion beam planarization with the aid of a sacrificial layer is a promising process route for surface smoothing, resulting in successfully reduction of the turning mark structures. A combination with direct surface smoothing to perform a subsequent improvement of the microroughness is presented with a special focus on roughness evolution, chemical composition, and optical surface properties. As a result, an ion beam based process route is suggested, which allows almost to recover the reflective properties and an increased long-term stability of smoothed aluminium surfaces.


Author(s):  
M. Spector ◽  
A. C. Brown

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.


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