Magnetic memory signals variation induced by applied magnetic field and static tensile stress in ferromagnetic steel

2016 ◽  
Vol 416 ◽  
pp. 213-219 ◽  
Author(s):  
Haihong Huang ◽  
Cheng Yang ◽  
Zhengchun Qian ◽  
Gang Han ◽  
Zhifeng Liu
2021 ◽  
Vol 117 ◽  
pp. 102378
Author(s):  
Huipeng Wang ◽  
Lihong Dong ◽  
Haidou Wang ◽  
Guozheng Ma ◽  
Binshi Xu ◽  
...  

2010 ◽  
Vol 97-101 ◽  
pp. 500-503 ◽  
Author(s):  
Jian Wei Li ◽  
Min Qiang Xu ◽  
Jian Cheng Leng ◽  
Ming Xiu Xu

Magnetic behavior of ferromagnetic materials has been using to detect defects of materials. To evaluate the stress states of the components by the magnetic memory signal, Q235 defect asymmetrical samples were made. The characteristics of magnetic memory of Q235 have been studied in the three different testing environments which are online-loading, online-unloading and offline-unloading under cycle tensile stress. The results show that magnetic memory signals have different characteristics in different testing environment. It is feasible to evaluate preliminarily the stress state by the magnetic memory signals.


1997 ◽  
Vol 119 (4) ◽  
pp. 799-806 ◽  
Author(s):  
A. A. Wereszczak ◽  
T. P. Kirkland

The tensile creep-rupture performance of a commercially available gas pressure sintered silicon nitride (Si3N4) and a sintered silicon carbide (SiC) is examined at 1038, 1150, and 1350°C. These two ceramic materials are candidates for nozzles and combustor tiles that are to be retrofitted in land-based gas turbine engines, and interest exists to investigate their high-temperature mechanical performance over service times up to, and in excess of, 10,000 hours (≈14 months). To achieve lifetimes approaching 10,000 hours for the candidate Si3N4 ceramic, it was found (or it was estimated based on ongoing test data) that a static tensile stress of 300 MPa at 1038 and 1150°C, and a stress of 125 MPa at 1350°C cannot be exceeded. For the SiC ceramic, it was estimated from ongoing test data that a static tensile stress of 300 MPa at 1038°C, 250 MPa at 1150°C, and 180 MPa at 1350°C cannot be exceeded. The creep-stress exponents for this Si3N4 were determined to be 33, 17, and 8 for 1038, 1150, and 1350°C, respectively. The fatigue-stress exponents for the Si3N4 were found to be equivalent to the creep exponents, suggesting that the fatigue mechanism that ultimately causes fracture is controlled and related to the creep mechanisms. Little success was experienced at generating failures in the SiC after several decades of time through exposure to appropriate tensile stress; it was typically observed that if failure did not occur on loading, then the SiC specimens most often did not creep-rupture. However, creep-stress exponents for the SiC were determined to be 57, 27, and 11 for 1038, 1150, and 1350°C, respectively. For SiC, the fatigue-stress exponents did not correlate as well with creep-stress exponents. Failures that occurred in the SiC were a result of slow crack growth that was initiated from the specimen’s surface.


2005 ◽  
Vol 12 (2) ◽  
pp. 107-111 ◽  
Author(s):  
Da-wei Yin ◽  
Bin-shi Xu ◽  
Shi-yun Dong ◽  
Shang-lin Yang ◽  
Li-hong Dong

2011 ◽  
Vol 110 (2) ◽  
pp. 023509 ◽  
Author(s):  
A. S. Pohjonen ◽  
F. Djurabekova ◽  
K. Nordlund ◽  
A. Kuronen ◽  
S. P. Fitzgerald

Sign in / Sign up

Export Citation Format

Share Document