Comparative Study on Optical Properties and Scratch Resistance of Nanocomposite Coatings Incorporated with Flame Spray Pyrolyzed Silica Modified via in-situ Route and ex-situ Route

2016 ◽  
Vol 32 (3) ◽  
pp. 251-258 ◽  
Author(s):  
Yun Wang ◽  
Ling Zhang ◽  
Yanjie Hu ◽  
Chunzhong Li
2004 ◽  
Vol 210 (1-2) ◽  
pp. 105-117 ◽  
Author(s):  
L. Alvarez ◽  
J. Espino ◽  
C. Ornelas ◽  
J.L. Rico ◽  
M.T. Cortez ◽  
...  

2013 ◽  
Vol 32 (3) ◽  
pp. 147-159 ◽  
Author(s):  
Sunanda Sain ◽  
Mousumi Bose ◽  
Dipa Ray ◽  
Aniruddha Mukhopadhyay ◽  
Suparna Sengupta ◽  
...  

2005 ◽  
Vol 872 ◽  
Author(s):  
Liangjin Wu ◽  
Shanthi Iyer ◽  
Kalyan Nunna ◽  
Sudhakar Bharatan ◽  
Jia Li ◽  
...  

AbstractIn this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 °C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures.The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As overpressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced “S-shaped curve”. The “inverted S-shaped curve” observed in the temperature dependence of PL FWHM is also discussed. 1.61 μm emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 °C by SS.


2010 ◽  
Vol 158 (3-4) ◽  
pp. 496-503 ◽  
Author(s):  
Yulan Gao ◽  
Xiangchen Fang ◽  
Zhenmin Cheng

2019 ◽  
Vol 216 (8) ◽  
pp. 1800676
Author(s):  
Peter Petrik ◽  
Alekszej Romanenko ◽  
Benjamin Kalas ◽  
László Péter ◽  
Tamás Novotny ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98026-98034 ◽  
Author(s):  
Ping Hu ◽  
Shun Dong ◽  
Minglun Li ◽  
Yuan Cheng ◽  
Boqian Sun

In situ and ex situ growth of ultra-long Si3N4 nanobelts (NBs) was simultaneously achieved via an effective method with the raw materials of graphite, nanosilicon and nanosilica.


Langmuir ◽  
2004 ◽  
Vol 20 (25) ◽  
pp. 10970-10981 ◽  
Author(s):  
Sarah L. Horswell ◽  
Alexei L. N. Pinheiro ◽  
Elena R. Savinova ◽  
Matthias Danckwerts ◽  
Bruno Pettinger ◽  
...  

2012 ◽  
Vol 16 (1) ◽  
pp. 27-36 ◽  
Author(s):  
Ekrachan Chaichana ◽  
Takeshi Shiono ◽  
Piyasan Praserthdam ◽  
Bunjerd Jongsomjit
Keyword(s):  

2017 ◽  
Vol 43 (11) ◽  
pp. 8040-8050 ◽  
Author(s):  
Fabrice Pougoum ◽  
Thomas Schmitt ◽  
Ludvik Martinu ◽  
Jolanta-Ewa Klemberg-Sapieha ◽  
Sylvio Savoie ◽  
...  

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