scholarly journals Flexible Electronics: Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage (Small 3/2016)

Small ◽  
2016 ◽  
Vol 12 (3) ◽  
pp. 265-265 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Bo Chen ◽  
Chundong Wang ◽  
Li Zhou ◽  
...  
Keyword(s):  
Data Storage ◽  
Flexible Electronics ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Organic small molecule-based RRAM for data storage and neuromorphic computing

2020 ◽  
Vol 8 (37) ◽  
pp. 12714-12738 ◽  
Author(s):  
Boyuan Mu ◽  
Hsiao-Hsuan Hsu ◽  
Chi-Ching Kuo ◽  
Su-Ting Han ◽  
Ye Zhou
Keyword(s):  
Small Molecules ◽  
Data Storage ◽  
Small Molecule ◽  
State Of The Art ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Neuromorphic Computing

Recent state-of-the-art developments related to organic small molecules for resistive random-access memory devices has been emphasized.

Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage

Small ◽  
2015 ◽  
Vol 12 (3) ◽  
pp. 390-396 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Bo Chen ◽  
Chundong Wang ◽  
Li Zhou ◽  
...  
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Halide perovskites for resistive random-access memories

2019 ◽  
Vol 7 (18) ◽  
pp. 5226-5234 ◽  
Author(s):  
Hyojung Kim ◽  
Ji Su Han ◽  
Sun Gil Kim ◽  
Soo Young Kim ◽  
Ho Won Jang
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Storage Devices ◽  
New Class ◽  
Switching Material ◽  
Halide Perovskites ◽  
Halide Perovskite

Halide-perovskites-based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because the switching material—halide perovskite—has received considerable attention in recent years owing to its unique and exotic electrical, optical, and structural properties.

Broadband photoelectric tunable quantum dot based resistive random access memory

2020 ◽  
Vol 8 (6) ◽  
pp. 2178-2185 ◽  
Author(s):  
Zhiliang Chen ◽  
Yu Yu ◽  
Lufan Jin ◽  
Yifan Li ◽  
Qingyan Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Multilevel Data ◽  
Access Memory ◽  
Storage Ability

Ultra-stable broadband photoelectric tunable PbS QD based RRAM device with flexibility and multilevel data storage ability was demonstrated.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

First-principles study of resistive random access memory based on single-layer black phosphorous resistive layer

2020 ◽  
Vol 128 (21) ◽  
pp. 215702
Author(s):  
Yuehua Dai ◽  
Jianhua Gao ◽  
Lihua Huang ◽  
Renjie Ding ◽  
Peng Wang ◽  
...  
Keyword(s):  
First Principles ◽  
Random Access ◽  
Single Layer ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Layer ◽  
First Principles Study ◽  
Black Phosphorous
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