Modulated photoconductivity method for investigation of band gap states distribution in silicon-based thin films

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1176-1179 ◽  
Author(s):  
A.G. Kazanskii ◽  
K.Yu. Khabarova ◽  
E.I. Terukov
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Gap States ◽  
Silicon Based

The modulated photocurrent technique: a powerful tool to investigate band gap states in silicon based thin films

2004 ◽  
Vol 1 (5) ◽  
pp. 1208-1226 ◽  
Author(s):  
Jean-Paul Kleider ◽  
Christophe Longeaud ◽  
Marie-Estelle Gueunier
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Gap States ◽  
Silicon Based

Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells

2011 ◽  
Vol 11 (1) ◽  
pp. S50-S53 ◽  
Author(s):  
Chao-Chun Wang ◽  
Chueh-Yang Liu ◽  
Shui-Yang Lien ◽  
Ko-Wei Weng ◽  
Jung-Jie Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Based ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

scholarly journals Activity of Sub‐Band Gap States in Ferroelectric Pb(Zr 0.2 Ti 0.8 )O 3 Thin Films

2020 ◽  
Vol 6 (4) ◽  
pp. 1900966
Author(s):  
Niranjan Ramakrishnegowda ◽  
Yeseul Yun ◽  
David S. Knoche ◽  
Lutz Mühlenbein ◽  
Xinye Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Gap States

Structure, band gap, and Mn-related mid-gap states in epitaxial single crystal (Zn1−xMgx)1−yMnyO thin films

2013 ◽  
Vol 113 (17) ◽  
pp. 173701
Author(s):  
Dapeng Zhu ◽  
Guolei Liu ◽  
Shuqin Xiao ◽  
Shishen Yan ◽  
Shumin He ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Band Gap ◽  
Gap States

Band gap states of copper phthalocyanine thin films induced by nitrogen exposure

2010 ◽  
Vol 96 (9) ◽  
pp. 093303 ◽  
Author(s):  
Tomoki Sueyoshi ◽  
Haruya Kakuta ◽  
Masaki Ono ◽  
Kazuyuki Sakamoto ◽  
Satoshi Kera ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Copper Phthalocyanine ◽  
Gap States

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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