Including a distribution of threshold displacement damage energy on the calculation of the damage function and electron's Non Ionizing Energy Loss

AbstractSolid phase epitaxial regrowth of spatially isolated amorphous regions in Si, Ge and GaP has been stimulated by using an electron beam with energies in the range of 50 to 300 keV. In all materials, the rate at which the amorphous zones disappear decreases as the energy of the electron beam increases from 50 keV reaching a minimum below the threshold displacement voltage before it again increases with increasing electron energy. The experimental results are interpreted in terms of creation and motion of defects (dangling bonds, charged defects) along the amorphouscrystalline interface.

Download Full-text

Low-energy electron beam induced regrowth of isolated amorphous zones in Si and Ge

Journal of Materials Research ◽

10.1557/jmr.1996.0274 ◽

1996 ◽

Vol 11 (9) ◽

pp. 2152-2157 ◽

Cited By ~ 30

Author(s):

I. Jenčič ◽

I. M. Robertson

Keyword(s):

Electron Beam ◽

Electron Energy ◽

Room Temperature ◽

Electronic Excitation ◽

Crystalline Material ◽

Low Energy ◽

Displacement Damage ◽

Low Energy Electron ◽

Threshold Displacement ◽

Displacive Type

Spatially isolated amorphous regions in Si and Ge have been regrown at room temperature by using an electron beam with an energy less than that required to cause displacement damage in crystalline material. The rate at which the zones regrow is a function of the energy of the electron beam. As the electron energy is increased from 25 keV (lowest energy employed), the regrowth rate decreases and reaches a minimum below the threshold displacement voltage. With further increases in the electron energy, the rate again increases. It is suggested that at the lower electron energies this room temperature regrowth process is stimulated by electronic excitation rather than by displacive-type processes.

Download Full-text

Threshold displacement energy and damage function in graphite from molecular dynamics

Carbon ◽

10.1016/j.carbon.2015.11.040 ◽

2016 ◽

Vol 99 ◽

pp. 71-78 ◽

Cited By ~ 24

Author(s):

A.J. McKenna ◽

T. Trevethan ◽

C.D. Latham ◽

P.J. Young ◽

M.I. Heggie

Keyword(s):

Molecular Dynamics ◽

Damage Function ◽

Displacement Energy ◽

Threshold Displacement

Download Full-text

Displacement damage and predicted non-ionizing energy loss in GaAs

Journal of Applied Physics ◽

10.1063/1.4977861 ◽

2017 ◽

Vol 121 (9) ◽

pp. 095104 ◽

Cited By ~ 8

Author(s):

Fei Gao ◽

Nanjun Chen ◽

Efrain Hernandez-Rivera ◽

Danhong Huang ◽

Paul D. LeVan

Keyword(s):

Energy Loss ◽

Displacement Damage

Download Full-text

Inelastic Electron-Matter Interactions

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100070047 ◽

1978 ◽

Vol 36 (3) ◽

pp. 259-267

Author(s):

J. Silcox

Keyword(s):

Electron Microscope ◽

Energy Loss ◽

Chemical Structure ◽

Inelastic Electron ◽

Primary Concern ◽

Unique Probe ◽

Introductory Paper ◽

Elastic Processes ◽

Experimental Level ◽

Inelastic Processes

In this introductory paper, my primary concern will be in identifying and outlining the various types of inelastic processes resulting from the interaction of electrons with matter. Elastic processes are understood reasonably well at the present experimental level and can be regarded as giving information on spatial arrangements. We need not consider them here. Inelastic processes do contain information of considerable value which reflect the electronic and chemical structure of the sample. In combination with the spatial resolution of the electron microscope, a unique probe of materials is finally emerging (Hillier 1943, Watanabe 1955, Castaing and Henri 1962, Crewe 1966, Wittry, Ferrier and Cosslett 1969, Isaacson and Johnson 1975, Egerton, Rossouw and Whelan 1976, Kokubo and Iwatsuki 1976, Colliex, Cosslett, Leapman and Trebbia 1977). We first review some scattering terminology by way of background and to identify some of the more interesting and significant features of energy loss electrons and then go on to discuss examples of studies of the type of phenomena encountered. Finally we will comment on some of the experimental factors encountered.

Download Full-text

Data Acquisition and Handling Unit for a Quantitative Use of Electron Energy Loss Spectroscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100078699 ◽

1977 ◽

Vol 35 ◽

pp. 232-233 ◽

Cited By ~ 1

Author(s):

P. Trebbia ◽

P. Ballongue ◽

C. Colliex

Keyword(s):

Electron Microscope ◽

Energy Loss ◽

Electron Energy ◽

Electron Energy Loss Spectroscopy ◽

Single Channel ◽

Detection System ◽

Surface Barrier ◽

Solid State Detector ◽

Electrostatic Mirror ◽

Electron Energy Loss

An effective use of electron energy loss spectroscopy for chemical characterization of selected areas in the electron microscope can only be achieved with the development of quantitative measurements capabilities.The experimental assembly, which is sketched in Fig.l, has therefore been carried out. It comprises four main elements.The analytical transmission electron microscope is a conventional microscope fitted with a Castaing and Henry dispersive unit (magnetic prism and electrostatic mirror). Recent modifications include the improvement of the vacuum in the specimen chamber (below 10-6 torr) and the adaptation of a new electrostatic mirror.The detection system, similar to the one described by Hermann et al (1), is located in a separate chamber below the fluorescent screen which visualizes the energy loss spectrum. Variable apertures select the electrons, which have lost an energy AE within an energy window smaller than 1 eV, in front of a surface barrier solid state detector RTC BPY 52 100 S.Q. The saw tooth signal delivered by a charge sensitive preamplifier (decay time of 5.10-5 S) is amplified, shaped into a gaussian profile through an active filter and counted by a single channel analyser.

Download Full-text

Trends in Electron Energy Loss Spectroscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100078675 ◽

1977 ◽

Vol 35 ◽

pp. 228-229

Author(s):

C. Colliex ◽

P. Trebbia

Keyword(s):

Energy Loss ◽

Electron Energy ◽

Electron Energy Loss Spectroscopy ◽

Materials Science ◽

Analytical Technique ◽

Recent Developments ◽

Quantitative Results ◽

Electron Microscopes ◽

Electron Energy Loss ◽

Primary Electrons

The physical foundations for the use of electron energy loss spectroscopy towards analytical purposes, seem now rather well established and have been extensively discussed through recent publications. In this brief review we intend only to mention most recent developments in this field, which became available to our knowledge. We derive also some lines of discussion to define more clearly the limits of this analytical technique in materials science problems.The spectral information carried in both low ( 0<ΔE<100eV ) and high ( >100eV ) energy regions of the loss spectrum, is capable to provide quantitative results. Spectrometers have therefore been designed to work with all kinds of electron microscopes and to cover large energy ranges for the detection of inelastically scattered electrons (for instance the L-edge of molybdenum at 2500eV has been measured by van Zuylen with primary electrons of 80 kV). It is rather easy to fix a post-specimen magnetic optics on a STEM, but Crewe has recently underlined that great care should be devoted to optimize the collecting power and the energy resolution of the whole system.

Download Full-text

Scattering-angle dependence of signal/background ratio of inner-shell electron excitation loss in EELS

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100075701 ◽

1983 ◽

Vol 41 ◽

pp. 390-391

Author(s):

T. Oikawa ◽

M. Inoue ◽

T. Honda ◽

Y. Kokubo

Keyword(s):

Energy Loss ◽

Electron Excitation ◽

Heavy Elements ◽

Background Intensity ◽

Light Elements ◽

Energy Analyzer ◽

High Background ◽

Scattering Angle ◽

Angle Dependence ◽

Shell Electron

EELS allows us to make analysis of light elements such as hydrogen to heavy elements of microareas on the specimen. In energy loss spectra, however, elemental signals ride on a high background; therefore, the signal/background (S/B) ratio is very low in EELS. A technique which collects the center beam axial-symmetrically in the scattering angle is generally used to obtain high total intensity. However, the technique collects high background intensity together with elemental signals; therefore, the technique does not improve the S/B ratio. This report presents the experimental results of the S/B ratio measured as a function of the scattering angle and shows the possibility of the S/B ratio being improved in the high scattering angle range.Energy loss spectra have been measured using a JEM-200CX TEM with an energy analyzer ASEA3 at 200 kV.Fig.l shows a typical K-shell electron excitation edge riding on background in an energy loss spectrum.

Download Full-text

Signal/Noise Ratio and Elemental Detectivity by Eels

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100054893 ◽

1982 ◽

Vol 40 ◽

pp. 488-489

Author(s):

R. F. Egerton

Keyword(s):

Energy Loss ◽

Electron Energy ◽

Elemental Analysis ◽

Electron Energy Loss Spectroscopy ◽

Emission Spectroscopy ◽

X Ray ◽

Signal Noise ◽

Characteristic Signal ◽

Noise Ratio ◽

Electron Energy Loss

An important parameter governing the sensitivity and accuracy of elemental analysis by electron energy-loss spectroscopy (EELS) or by X-ray emission spectroscopy is the signal/noise ratio of the characteristic signal.

Download Full-text