Identifying microstructural changes responsible for retarded grain growth during tungsten recrystallization after helium plasma exposure

2021 ◽  
pp. 153448
Author(s):  
M.A.T. Thompson ◽  
K. Song ◽  
G. De Temmerman ◽  
H. Chen ◽  
N. Kirby ◽  
...  
Keyword(s):  
Grain Growth ◽  
Helium Plasma ◽  
Plasma Exposure ◽  
Microstructural Changes

Plasma Effects on Thin Film Microstructure

1994 ◽  
Vol 343 ◽  
Author(s):  
Munir D. Naeem ◽  
Stephen M. Rossnagel ◽  
Krishna Rajan
Keyword(s):  
Grain Growth ◽  
Thermal Effects ◽  
Low Energy ◽  
Copper Films ◽  
Rf Power ◽  
Plasma Exposure ◽  
Microstructural Changes ◽  
Cu Films ◽  
Transmission Electron ◽  
Plasma Effects

ABSTRACTWe have studied the effects of low energy ion bombardment on thin copper films. Evaporated, sputtered and CVD copper films (∼50 nm) were exposed to Magnetically Enhanced (ME) Ar plasmas. The microstructural changes (grain size) in the films were studied using Transmission Electron Microscopy (TEM).Grain growth is observed in thin Cu films when the films are exposed to low energy (87 eV) Ar plasmas. The microstructural changes in sputtered and evaporated films are quite significant whereas the plasma bombardment has less effect on CVD films. These changes occur very rapidly and cannot be attributed solely to the thermal effects, especially at low RF power levels (500 W). The initial microstructure of the film has a significant effect on grain growth during plasma exposure.

A Comprehensive Study of Plasma Enhanced Crystallization of a-Si:H Films on Glass

1994 ◽  
Vol 345 ◽  
Author(s):  
Aiguo Yin ◽  
Stephen J. Fonash ◽  
D. M. Reber ◽  
Y. M. Li ◽  
M. Bennett
Keyword(s):  
Grain Growth ◽  
Cyclotron Resonance ◽  
Oxygen Plasma ◽  
Crystallization Process ◽  
Electron Cyclotron Resonance ◽  
Extensive Study ◽  
Helium Plasma ◽  
Plasma Exposure ◽  
Plasma Exposure Time ◽  
Comprehensive Study

AbstractAn extensive study is reported here on plasma enhanced crystallization of a-Si:H films on glass. Both electron cyclotron resonance (ECR) helium plasma exposures and ECR oxygen plasma exposures were investigated to obtain enhanced crystallization of a-Si:H films. We have found that the ECR helium plasma exposure can render more crystallization enhancement than the ECR oxygen plasma exposure. This is because ECR helium plasma exposures can produce more dangling Si bonds, voids, and “interstitial” Si atoms in a-Si:H films than ECR oxygen plasma exposures. These dangling Si bonds, voids, and “interstitial” Si atoms are believed to be the cause of the observed reduced incubation time as well as enhanced grain growth of the plasma exposed a-Si:H films in subsequent crystallization processes. This model is supported by the effects of plasma exposure time on the enhanced crystallization process of a-Si:H films.

scholarly journals Secondary electron emission of tin and tin-lithium under low energy helium plasma exposure

2017 ◽  
Vol 13 ◽  
pp. 21-27 ◽  
Author(s):  
V. Kvon ◽  
E. Oyarzabal ◽  
E. Zoethout ◽  
A.B. Martin-Rojo ◽  
T.W. Morgan ◽  
...  
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Low Energy ◽  
Helium Plasma ◽  
Plasma Exposure

scholarly journals Formation Condition of Fiberform Nanostructured Tungsten by Helium Plasma Exposure

2010 ◽  
Vol 5 ◽  
pp. S1023-S1023 ◽  
Author(s):  
Wataru SAKAGUCHI ◽  
Shin KAJITA ◽  
Noriyasu OHNO ◽  
Makoto TAKAGI ◽  
Hiroaki KURISHITA
Keyword(s):  
Formation Condition ◽  
Helium Plasma ◽  
Plasma Exposure

Crystallinity and grain distributions of fiber-formed nanostructure on tungsten surface with helium plasma exposure

Materialia ◽  
2020 ◽  
Vol 9 ◽  
pp. 100564
Author(s):  
S. Takamura ◽  
H. Iwata ◽  
T. Aota ◽  
Y. Uesugi ◽  
S. Maenaka ◽  
...  
Keyword(s):  
Helium Plasma ◽  
Plasma Exposure ◽  
Tungsten Surface

scholarly journals Micron-Bubble Formation on Polycrystal Tungsten due to Low-Energy and High-Flux Helium Plasma Exposure

2005 ◽  
Vol 46 (3) ◽  
pp. 561-564 ◽  
Author(s):  
Dai Nishijima ◽  
Mitsutaka Miyamoto ◽  
Hirotomo Iwakiri ◽  
Minyou Ye ◽  
Noriyasu Ohno ◽  
...  
Keyword(s):  
Bubble Formation ◽  
Low Energy ◽  
Helium Plasma ◽  
High Flux ◽  
Plasma Exposure

Modification of the Electrical Properties of a GaAs Surface by Plasma Exposure

1986 ◽  
Vol 68 ◽  
Author(s):  
Moshe Oren ◽  
Stanley Zemon;
Keyword(s):  
Electrical Properties ◽  
Electron Diffraction ◽  
Carrier Concentration ◽  
Room Temperature ◽  
Plasma Processing ◽  
Deep Levels ◽  
Gaas Surface ◽  
Helium Plasma ◽  
Electrical Characteristics ◽  
Plasma Exposure

AbstractPlasma processing is an essential part for the fabrication of GaAs ICs.It was found that the exposure of sulfur doped n-type GaAs layers to a plasma of helium, oxygen, or nitrogen changed their electrical characteristics without introducing crystalline damage, as observed by electron diffraction measurments or etching.Exposure to a plasma depletes the surface carrier concentration but the mobility remains unchanged.Compared to O2 and N2 the helium plasma has the largest effect on the GaAs surface.Exposure of S-doped GaAs layers to a He plasma at 350°C produces two new deep levels at 840-nm and in the region between 863 and 872-nm.These levels were not observed for a He plasma exposure at room temperature or for O2 plasma exposure at 350°C.

scholarly journals Mechanical properties of tungsten following rhenium ion and helium plasma exposure

2017 ◽  
Vol 12 ◽  
pp. 1336-1341 ◽  
Author(s):  
C.S. Corr ◽  
S. O'Ryan ◽  
C. Tanner ◽  
M. Thompson ◽  
J.E. Bradby ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Helium Plasma ◽  
Plasma Exposure

In situ reflectivity of tungsten mirrors under helium plasma exposure

2009 ◽  
Vol 390-391 ◽  
pp. 1149-1152 ◽  
Author(s):  
W. Sakaguchi ◽  
S. Kajita ◽  
N. Ohno ◽  
M. Takagi
Keyword(s):  
Helium Plasma ◽  
Plasma Exposure

Structural Stability of Cu Processed by Severe Plastic Deformation Method

2010 ◽  
Vol 163 ◽  
pp. 114-117 ◽  
Author(s):  
Kinga Rodak ◽  
Krzysztof Radwański
Keyword(s):  
Plastic Deformation ◽  
Severe Plastic Deformation ◽  
Grain Growth ◽  
Structural Stability ◽  
Annealing Time ◽  
Deformation Method ◽  
Microstructural Changes ◽  
Annealing Behaviour ◽  
Cyclic Extrusion Compression

The annealing behaviour of monocrystaline Cu processed by Cyclic Extrusion Compression (CEC) was investigated. The effect of the CEC strain on the annealing behaviour of submicrometer grained structure was studied by examination of the microstructural changes of the samples processed by two different CEC strains, 4.8 and 13.9 during annealing at 300oC for the time in the range from 1sec to 120 min. The results show that microstructure is stable up to an annealing time of 15 min. At a higher time of annealing (above 15 min), a gradual grain growth occurs.

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