scholarly journals Mechanical properties of tungsten following rhenium ion and helium plasma exposure

2017 ◽  
Vol 12 ◽  
pp. 1336-1341 ◽  
Author(s):  
C.S. Corr ◽  
S. O'Ryan ◽  
C. Tanner ◽  
M. Thompson ◽  
J.E. Bradby ◽  
...  
2017 ◽  
Vol 13 ◽  
pp. 21-27 ◽  
Author(s):  
V. Kvon ◽  
E. Oyarzabal ◽  
E. Zoethout ◽  
A.B. Martin-Rojo ◽  
T.W. Morgan ◽  
...  

2010 ◽  
Vol 5 ◽  
pp. S1023-S1023 ◽  
Author(s):  
Wataru SAKAGUCHI ◽  
Shin KAJITA ◽  
Noriyasu OHNO ◽  
Makoto TAKAGI ◽  
Hiroaki KURISHITA

Materialia ◽  
2020 ◽  
Vol 9 ◽  
pp. 100564
Author(s):  
S. Takamura ◽  
H. Iwata ◽  
T. Aota ◽  
Y. Uesugi ◽  
S. Maenaka ◽  
...  

2005 ◽  
Vol 46 (3) ◽  
pp. 561-564 ◽  
Author(s):  
Dai Nishijima ◽  
Mitsutaka Miyamoto ◽  
Hirotomo Iwakiri ◽  
Minyou Ye ◽  
Noriyasu Ohno ◽  
...  

1986 ◽  
Vol 68 ◽  
Author(s):  
Moshe Oren ◽  
Stanley Zemon;

AbstractPlasma processing is an essential part for the fabrication of GaAs ICs.It was found that the exposure of sulfur doped n-type GaAs layers to a plasma of helium, oxygen, or nitrogen changed their electrical characteristics without introducing crystalline damage, as observed by electron diffraction measurments or etching.Exposure to a plasma depletes the surface carrier concentration but the mobility remains unchanged.Compared to O2 and N2 the helium plasma has the largest effect on the GaAs surface.Exposure of S-doped GaAs layers to a He plasma at 350°C produces two new deep levels at 840-nm and in the region between 863 and 872-nm.These levels were not observed for a He plasma exposure at room temperature or for O2 plasma exposure at 350°C.


2009 ◽  
Vol 390-391 ◽  
pp. 1149-1152 ◽  
Author(s):  
W. Sakaguchi ◽  
S. Kajita ◽  
N. Ohno ◽  
M. Takagi

2013 ◽  
Vol 586 ◽  
pp. 87-90
Author(s):  
Olga Bláhová ◽  
Petra Bublíková ◽  
Petr Slepička ◽  
Václav Švorčík

Mechanical properties and surface morphology of metallized and grafted PE samples were studied upon their surface modification (plasma exposure and grafting) and subsequent metallization (Au sputtering).


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