Liquid-phase epitaxy of In-doped PbTe for the application of mid-infrared semiconductor laser

2008 ◽  
Vol 69 (2-3) ◽  
pp. 727-729 ◽  
Author(s):  
Arata Yasuda ◽  
Ken Suto ◽  
Yatsuhiro Takahashi ◽  
Yoshikazu Kato ◽  
Yutaka Oyama ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Semiconductor Laser ◽  
Liquid Phase Epitaxy ◽  
Mid Infrared

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

2007 ◽  
Author(s):  
V. M. Smirnov ◽  
P. J. Batty ◽  
A. Krier ◽  
R. Jones ◽  
V. I. Vasil'ev ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting

Growth by liquid phase epitaxy and characterization of GaInAsSb and InAsSbP alloys for mid-infrared applications (2-3 um)

1991 ◽  
Author(s):  
Eric Tournie ◽  
J. L. Lazzari ◽  
Habib Mani ◽  
F. Pitard ◽  
Claude L. Alibert ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Mid Infrared

LPE Growth of Mixed Composition HI-V “Virtual Substrates” for MID-Infrared Optoelectronic Devices

1996 ◽  
Vol 450 ◽  
Author(s):  
Y. Mao ◽  
A. Krier
Keyword(s):  
Liquid Phase ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Liquid Phase Epitaxy ◽  
Lattice Mismatch ◽  
Growth Parameters ◽  
Optoelectronic Devices ◽  
Mixed Composition ◽  
Mid Infrared ◽  
Photoluminescence Efficiency

ABSTRACTLiquid phase epitaxy can be effectively used to grow a thick graded ternary or quaternary buffer layer to provide a “virtual substrate” for subsequent device epitaxy. Grading characteristics of InGaAs, InAsSb and InAsSbP epitaxial layers grown by LPE are discussed. The effects of the principal LPE growth parameters on epiiayer thickness, surface morphology and composition, lattice-mismatch and photoluminescence efficiency were investigated and are described.

Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy

2014 ◽  
Vol 67 ◽  
pp. 609-612 ◽  
Author(s):  
Arata Yasuda ◽  
Ken Suto ◽  
Yatsuhiro Takahashi ◽  
Jun-ichi Nishizawa
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Mid Infrared

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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