Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering

2011 ◽  
Vol 72 (12) ◽  
pp. 1393-1396 ◽  
Author(s):  
Hai-Qin Huang ◽  
Feng-Juan Liu ◽  
Jian Sun ◽  
Jian-Wei Zhao ◽  
Zuo-Fu Hu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Zno Thin Film ◽  
Radio Frequency Magnetron Sputtering

Active-layer Thickness Effects Related to the Threshold Voltage and Mobility Degradation in Poly-crystalline ZnO Thin-Film Transistors

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1307-1311 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Jeong-Gyu Park ◽  
Seung-Dong Yang ◽  
Ho-Jin Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Zno Thin Film ◽  
Mobility Degradation

Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering

2008 ◽  
Vol 52 (5) ◽  
pp. 813-816 ◽  
Author(s):  
R. Navamathavan ◽  
Chi Kyu Choi ◽  
Eun-Jeong Yang ◽  
Jae-Hong Lim ◽  
Dae-Kue Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thin Film Transistors ◽  
Radio Frequency Magnetron ◽  
Zno Thin Film ◽  
Radio Frequency Magnetron Sputtering
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