Admittance measurements in the temperature range (8−77) K for characterization of MIS structures based on MBE n -Hg 0.78 Cd 0.22 Te with and without graded-gap layers

2017 ◽  
Vol 102 ◽  
pp. 42-48 ◽  
Author(s):  
A.V. Voitsekhovskii ◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh
Keyword(s):  
Temperature Range ◽  
Mis Structures

scholarly journals Isolation and characterization of a new cold-active protease from psychrotrophic bacteria of Western Himalayan glacial soil

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saleem Farooq ◽  
Ruqeya Nazir ◽  
Shabir Ahmad Ganai ◽  
Bashir Ahmad Ganai
Keyword(s):  
Specific Activity ◽  
Temperature Range ◽  
Psychrotrophic Bacteria ◽  
Isolation And Characterization ◽  
Cold Active ◽  
Active Protease ◽  
Quantitative Screening ◽  
First Time ◽  
Low K

AbstractAs an approach to the exploration of cold-active enzymes, in this study, we isolated a cold-active protease produced by psychrotrophic bacteria from glacial soils of Thajwas Glacier, Himalayas. The isolated strain BO1, identified as Bacillus pumilus, grew well within a temperature range of 4–30 °C. After its qualitative and quantitative screening, the cold-active protease (Apr-BO1) was purified. The Apr-BO1 had a molecular mass of 38 kDa and showed maximum (37.02 U/mg) specific activity at 20 °C, with casein as substrate. It was stable and active between the temperature range of 5–35 °C and pH 6.0–12.0, with an optimum temperature of 20 °C at pH 9.0. The Apr-BO1 had low Km value of 1.0 mg/ml and Vmax 10.0 µmol/ml/min. Moreover, it displayed better tolerance to organic solvents, surfactants, metal ions and reducing agents than most alkaline proteases. The results exhibited that it effectively removed the stains even in a cold wash and could be considered a decent detergent additive. Furthermore, through protein modelling, the structure of this protease was generated from template, subtilisin E of Bacillus subtilis (PDB ID: 3WHI), and different methods checked its quality. For the first time, this study reported the protein sequence for psychrotrophic Apr-BO1 and brought forth its novelty among other cold-active proteases.

Azo-containing asymmetric bent-core liquid crystals with modulated smectic phases

RSC Advances ◽  
2015 ◽  
Vol 5 (80) ◽  
pp. 64886-64891 ◽  
Author(s):  
Nemanja Trišović ◽  
Jelena Antanasijević ◽  
Tibor Tóth-Katona ◽  
Michal Kohout ◽  
Miroslaw Salamonczyk ◽  
...  
Keyword(s):  
Liquid Crystals ◽  
Synthesis And Characterization ◽  
Temperature Range ◽  
Smectic Phases ◽  
Potential Applications

We present the synthesis and characterization of ten asymmetric bent-core liquid crystals with enantiotropic modulated smectic (B7 type) phases. Their relatively low and wide photosensitive mesomorphic temperature range offers potential applications.

scholarly journals Synthesis and characterization of PIL/pNIPAAm hybrid hydrogels

2016 ◽  
Vol 2 (1) ◽  
pp. 1-4
Author(s):  
Sylvia Pfensig ◽  
Daniela Arbeiter ◽  
Klaus-Peter Schmitz ◽  
Niels Grabow ◽  
Thomas Eickner ◽  
...  
Keyword(s):  
Mechanical Characterization ◽  
Heating Temperature ◽  
Controlled Drug Release ◽  
Solution Temperature ◽  
Scanning Calorimetry ◽  
Critical Solution Temperature ◽  
Temperature Range ◽  
Hybrid Hydrogels ◽  
Higher Temperature

AbstractIn this study, varying amounts of NIPAAm and an ionic liquid (IL), namely 1-vinyl-3-isopropylimidazolium bromide ([ViPrIm]+[Br]−), have been used to synthesize hybrid hydrogels by radical emulsion polymerization. Amounts of 70/30%, 50/50%, 30/70%, 15/85% and 5/95% (wt/wt) of PIL/pNIPAAm were used to produce hybrid hydrogels as well as the parental hydrogels. The adhesive strength was investigated and evaluated for mechanical characterization. Thermal properties of resulting hydrogels have been investigated using differential scanning calorimetry (DSC) in a default heating temperature range (heating rate 10 K min−1). The presence of poly ionic liquids (PIL) in the polymer matrix leads to a moved LCST (lower critical solution temperature) to a higher temperature range for certain hybrid hydrogels PIL/pNIPAAm. While pNIPAAm exhibits an LCST at 33.9 ± 0.3°C, PIL/pNIPAAm 5/95% and PIL/pNIPAAm 15/85% were found to have LCSTs at 37.6 ± 0.9°C and 52 ± 2°C, respectively. This could be used for controlled drug release that goes along with increasing body temperature in response to an implantation caused infection.

Characterization of CsI:Tl at a wide temperature range (−40°C to +22°C)

2013 ◽  
Vol 707 ◽  
pp. 73-79 ◽  
Author(s):  
M. Grodzicka ◽  
M. Moszyński ◽  
T. Szczęśniak ◽  
W. Czarnacki ◽  
M. Szawłowski ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
Temperature Range

Characterization of RF magnetron-sputtered a-BOxNy/ZnO MIS structures for transparent electronics

2021 ◽  
Author(s):  
Chukwudi E. Iheomamere ◽  
Corey L. Arnold ◽  
Jason Summers ◽  
Richard F. Reidy ◽  
Andrey A. Voevodin ◽  
...  
Keyword(s):  
Transparent Electronics ◽  
Mis Structures

Characterization of Thermally Induced Stress in IC Packages Using PiFETs Over a Temperature Range of −180°C to 80°C

2014 ◽  
Vol 2014 (1) ◽  
pp. 000500-000504 ◽  
Author(s):  
Francy J. Akkara ◽  
Uday S. Goteti ◽  
Richard C. Jaeger ◽  
Michael C. Hamilton ◽  
Michael J. Palmer ◽  
...  
Keyword(s):  
Shear Stress ◽  
Stress Component ◽  
Shear Stress Component ◽  
Thermally Induced ◽  
Temperature Changes ◽  
Temperature Range ◽  
Induced Stress ◽  
Highly Sensitive ◽  
Stress Components

In certain applications, IC packages may be exposed to extreme temperatures and knowledge of thermally induced stress aids the prediction of performance degradation or failure of the IC. In the devices that are used in extreme conditions, the stress is caused mainly by the mismatch in expansion of various materials triggered by the different coefficients of thermal expansion. This work performed in this study is conducted using NMOS current mirror circuits that are cycled through a wide temperature range of −180°C to 80°C. These circuits are highly sensitive to stress and provide well-localized measurements of shear stress. The sensors are fabricated in such a way that the effects of certain stress components are isolated. These sensors are also temperature compensated so that only the effect of mechanical stress components is observed and changes in device performance due to temperature changes are minimal. Current readings obtained from the sensors are used to extract the shear stress component. Finite element simulations, using expected materials performance parameter information were also performed for similar packages and these results are compared to the measured results.

Synthesis and characterization of a quaternary copolymer retarder for cementing in a long sealing section with large temperature difference

2020 ◽  
Vol 44 (9) ◽  
pp. 3771-3776
Author(s):  
Zhigang Peng ◽  
Chen Chen ◽  
Qian Feng ◽  
Yong Zheng ◽  
Huan Liu ◽  
...  
Keyword(s):  
Temperature Difference ◽  
Synthesis And Characterization ◽  
Large Temperature ◽  
Temperature Range ◽  
Large Temperature Difference

We synthesized a retarder, which has excellent thickening performance in the temperature range of 90–150 °C.

Dielectric characterization of collagen, elastin, and aortic valves in the low temperature range

2000 ◽  
Vol 11 (6) ◽  
pp. 583-598 ◽  
Author(s):  
Valerie Samouillan ◽  
Alain Lamure ◽  
Eliane Maurel ◽  
Jany Dandurand ◽  
Colette Lacabanne ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aortic Valves ◽  
Dielectric Characterization ◽  
Temperature Range

Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in wide temperature range

2014 ◽  
Vol 22 (4) ◽  
Author(s):  
A. Voitsekhovskii ◽  
S. Nesmelov ◽  
S. Dzyadukh
Keyword(s):  
Wide Temperature Range ◽  
Temperature Drop ◽  
Differential Resistance ◽  
Near Surface ◽  
Temperature Range ◽  
Strong Inversion ◽  
Capacitance Voltage ◽  
Film Bulk ◽  
Temperature Dependences ◽  
Mis Structures

AbstractInfluence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg1−xCdxTe (x = 0.22–0.23 and 0.31–0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C-V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C-V characteristics of MIS-structures based on n-HgCdTe (x = 0.22–0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31–0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22–0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31–0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25–77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22–0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8–77 K.

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