Characterization of RF magnetron-sputtered a-BOxNy/ZnO MIS structures for transparent electronics

2021 ◽  
Author(s):  
Chukwudi E. Iheomamere ◽  
Corey L. Arnold ◽  
Jason Summers ◽  
Richard F. Reidy ◽  
Andrey A. Voevodin ◽  
...  
Keyword(s):  
Transparent Electronics ◽  
Mis Structures

Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers

2017 ◽  
Vol 178 ◽  
pp. 298-303 ◽  
Author(s):  
A. Mazurak ◽  
R. Mroczyński ◽  
J. Jasiński ◽  
D. Tanous ◽  
B. Majkusiak ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Nanocrystals ◽  
Thin Layers ◽  
Doped Silicon ◽  
Co Doped ◽  
Mis Structures

Characterization of MIS structures and thin film transistors using RF-sputtered HfO 2 /HIZO layers

2017 ◽  
Vol 75 ◽  
pp. 9-13 ◽  
Author(s):  
I. Hernandez ◽  
C.A. Pons-Flores ◽  
I. Garduño ◽  
J. Tinoco ◽  
I. Mejia ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Mis Structures

(Invited) Fabrication and Characterization of Ge-Based MIS Structures

2021 ◽  
Vol MA2021-02 (30) ◽  
pp. 937-937
Author(s):  
Yohei Otani ◽  
Daichi Yamada ◽  
Hiroshi Okamoto ◽  
Toshiro Ono ◽  
Tetsuya Sato ◽  
...  
Keyword(s):  
Fabrication And Characterization ◽  
Mis Structures

Characterization of Pulsed-Laser-Deposited Aln Films as a Gate Dielectric in Aln-Si Mis Structures

2006 ◽  
Author(s):  
S. Simeonov ◽  
S. Bakalova ◽  
E. Kafedjiiska ◽  
A. Szekeres ◽  
S. Grigorescu ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Pulsed Laser ◽  
Mis Structures

scholarly journals Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

2011 ◽  
Vol 119 (5) ◽  
pp. 692-695 ◽  
Author(s):  
S. Gierałtowska ◽  
D. Sztenkiel ◽  
E. Guziewicz ◽  
M. Godlewski ◽  
G. Łuka ◽  
...  
Keyword(s):  
Properties And Characterization ◽  
Mis Structures

scholarly journals Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

2011 ◽  
Vol 51 (2) ◽  
pp. 370-375 ◽  
Author(s):  
Engin Arslan ◽  
Serkan Bütün ◽  
Yasemin Şafak ◽  
Habibe Uslu ◽  
İlke Taşçıoğlu ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Mis Structures

Electrical Characterization of Al-AlN(PSMBE Grown)-Si MIS Structures

1996 ◽  
Vol 449 ◽  
Author(s):  
Regina Y Krupitskaya ◽  
Gregory W Auner ◽  
Tom E Daley
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Electrical Characterization ◽  
Plasma Source ◽  
Current Leakage ◽  
Different Types ◽  
Mis Structures

ABSTRACTAIN films were grown by plasma source Molecular Beam Epitaxy (PSMBE) on n-type Si(111) substrates under various growth parameters. I-V and C-V-f dependencies of AI-AIN-Si(111) MIS structures were measured. Electrical characterization of MIS structures with PSMBE grown textured AIN thin films as insulator shows that low current leakage can be achieved, although some samples have rectifying I-V dependencies. C-V-f characteristics reveal evidence of the presence of different types of traps. Additional investigations are needed in order to determine the nature of these traps.

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