ZnO-Pr6O11-Co3O4-TiO2-Based Ceramic Varistor Materials

2010 ◽  
Vol 434-435 ◽  
pp. 389-392
Author(s):  
Hai Feng ◽  
Zhi Jian Peng ◽  
Cheng Biao Wang ◽  
Zhi Qiang Fu ◽  
He Zhuo Miao
Keyword(s):  
Grain Growth ◽  
Leakage Current ◽  
Nonlinear Property ◽  
Leakage Currents ◽  
Nonlinear Properties ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Ceramic Varistor

The preparation and characterization of ZnO-Pr6O11-Co3O4-TiO2 (ZPCT) based varistor materials with different doping levels of TiO2 and Pr6O11 were investigated. The results reveal that: (1) TiO2 is an important additive, acting as an inhibitor of ZnO grain growth. The doping of appropriate amount of TiO2 can significantly improve the nonlinear properties and decreases the leakage current of the varistors, achieving a relatively high nonlinear exponent and low leakage current with 1.0 mol% TiO2 doped. (2) The oxide of Pr6O11 microstructurally plays the role of inhibition in grain growth. The doping of appropriate amount of Pr6O11 can improve the nonlinear property, and decrease the leakage currents of the varistors, acquiring the optimum results with 1.5 mol% Pr6O11 doped.

Temperature and Doping Dependency of Piezoresistivity in p-type Silicon

2000 ◽  
Vol 657 ◽  
Author(s):  
Eivind Lund ◽  
Terje G. Finstad
Keyword(s):  
Leakage Current ◽  
Negative Temperature ◽  
Leakage Currents ◽  
Micro Electro Mechanical Systems ◽  
Type Silicon ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Wafer Thickness ◽  
P Type ◽  
Doping Profiles

ABSTRACTWe have performed new measurements of the temperature and doping dependency of the piezoresistive effect in p-type silicon. Piezoresistivity is one of the most common sensing principles of micro-electro-mechanical-systems (MEMS). Our measurements are performed in a specially designed setup based on the well-known 4 point bending technique. The samples are beams of full wafer thickness. To minimize leakage currents and to obtain uniform doping profiles, we have used SIMOX (Separation by IMplantation of OXygen) substrates with resistors defined in an epitaxial layer. Spreading resistance measurements show that the doping profiles are uniform with depth, while measurements of leakage current versus temperature indicate low leakage current. In this paper we present results for the doping concentration range from 1×1017 – 1×1020 cm−3 and the temperature range from –30 to 150 degrees Celsius. The results show a doping dependency of piezoresistivity well described by the current models. The measurements of the temperature dependency of the coefficients of piezoresistivity are compared to a linear model with a negative temperature coefficient whose absolute value decreases with increasing doping.

DIELECTRIC FORMATION AND ELECTRICAL CHARACTERIZATION OF SINTERED TANTALUM SLUGS

2007 ◽  
Vol 21 (02n03) ◽  
pp. 123-128 ◽  
Author(s):  
R. GOVINDAIAH ◽  
T. BALAJI ◽  
ARBIND KUMAR ◽  
N. PARASURAM ◽  
Y. PURUSHOTHAM ◽  
...  
Keyword(s):  
Leakage Current ◽  
High Reliability ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Lcr Meter ◽  
Physical And Chemical ◽  
And Chemical Properties

The present electronic industry requires capacitors having high capacitance with lower volume and space, high reliability and low leakage current. The solid tantalum capacitor ideally meets such requirements. In the present paper, the electrical characterization of tantalum anodes prepared from sodium reduced tantalum powder has been described. The capacitance, DC leakage current are measured for tantalum anodes made with different particle sizes of powders using the LCR Meter and DC Leakage Tester and compared with the physical and chemical properties. Interestingly, it was found that the DC leakage current decreases with decrease in particle size on contrary to the surface area. Besides, a trade-off appears imminent to establish the formation voltage and DC leakage current relationship.

Influence of Cr2O3 on highly nonlinear properties and low leakage current of ZnO–Bi2O3 varistor ceramics

2016 ◽  
Vol 42 (9) ◽  
pp. 10547-10550 ◽  
Author(s):  
Hairui Bai ◽  
Shuhui Li ◽  
Yunhan Zhao ◽  
Zhijun Xu ◽  
Ruiqing Chu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Nonlinear Properties ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Highly Nonlinear

Ito/A-Si:H Schottky Photodiode With Low Leakage Current And High Stability

1999 ◽  
Vol 558 ◽  
Author(s):  
Qinghua Ma ◽  
Arokia Nathan ◽  
R.V.R. Murthy
Keyword(s):  
Leakage Current ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Low Leakage ◽  
A Value ◽  
Low Leakage Current ◽  
Temperature Deposition ◽  
Schottky Photodiode ◽  
Hydrogenated Amorphous

ABSTRACTWe report the design, fabrication, and characterization of an indium tin oxide/hydrogenated amorphous silicon (ITO/a-Si:H) Schottky photodiode based on room temperature deposition of ITO. The optical transmittance of the ITO is larger than 80% in the visible light range and its resistivity is less than 6 x 10-4 Ω-cm. The fabricated photodiode exhibits low leakage current and stable I-V characteristics. The leakage current is 7x10-10 A/cm2when biased at -2 V and the shift in leakage current stabilizes to a value less than 9% after 2 seconds of biasing at -2 V. The improvement in performance can be attributed to the high integrity ITO/a-Si:H interface achieved with the low temperature deposition.

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

2018 ◽  
Vol 65 (2) ◽  
pp. 680-686 ◽  
Author(s):  
Cheng-Jung Lee ◽  
Ke-Jing Lee ◽  
Yu-Chi Chang ◽  
Li-Wen Wang ◽  
Der-Wei Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Organic Transistors ◽  
Barium Zirconate ◽  
Low Leakage ◽  
Low Leakage Current
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