Diffusive relaxation of Li in particles of silicon oxycarbide measured by galvanostatic titrations

2014 ◽  
Vol 249 ◽  
pp. 219-230 ◽  
Author(s):  
P.D. Weidman ◽  
Dongjoon Ahn ◽  
R. Raj
Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3276
Author(s):  
Aitana Tamayo ◽  
Juan Rubio ◽  
Fausto Rubio ◽  
Mᵃ Angeles Rodriguez

Silicon oxycarbide ceramers containing 5% aluminum, zirconium, and cobalt with respect to the total Si amount are prepared from a commercial polysiloxane and molecular precursors and pyrolyzed at temperatures ranging from 500 to 1000 °C. HF etching is carried out to partially digest the silica phase, thus revealing structural characteristics of the materials, which depend upon the incorporated heteroatom. From the structural and textural characterization, it was deduced that when Al enters into the ceramer structure, the crosslinking degree is increased, leading to lower carbon domain size and carbon incorporation as well. On the contrary, the substitution by Zr induced a phase-separated SiO2-ZrO2 network with some degree of mesoporosity even at high pyrolysis temperatures. Co, however, forms small carbidic crystallites, which strongly modifies the carbonaceous phase in such a way that even when it is added in a small amount and in combination with other heteroatoms, this transient metal dominates the structural characteristics of the ceramer material. This systematic study of the ceramer compounds allows the identification of the ultimate properties of the polymer-derived ceramic composites.


Open Ceramics ◽  
2021 ◽  
pp. 100116
Author(s):  
Ipsita P. Swain ◽  
Nishit Sadual ◽  
Shantanu K. Behera
Keyword(s):  

2020 ◽  
Vol 38 (4) ◽  
pp. 784-791 ◽  
Author(s):  
Faisal Ahmed Memon ◽  
Francesco Morichetti ◽  
Matteo Cantoni ◽  
Claudio Somaschini ◽  
Marco Asa ◽  
...  

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 147
Author(s):  
Qing Su ◽  
Tianyao Wang ◽  
Lin Shao ◽  
Michael Nastasi

The management of irradiation defects is one of key challenges for structural materials in current and future reactor systems. To develop radiation tolerant alloys for service in extreme irradiation environments, the Fe self-ion radiation response of nanocomposites composed of amorphous silicon oxycarbide (SiOC) and crystalline Fe(Cr) were examined at 10, 20, and 50 displacements per atom damage levels. Grain growth in width direction was observed to increase with increasing irradiation dose in both Fe(Cr) films and Fe(Cr) layers in the nanocomposite after irradiation at room temperature. However, compared to the Fe(Cr) film, the Fe(Cr) layers in the nanocomposite exhibited ~50% less grain growth at the same damage levels, suggesting that interfaces in the nanocomposite were defect sinks. Moreover, the addition of Cr to α-Fe was shown to suppress its grain growth under irradiation for both the composite and non-composite case, consistent with earlier molecular dynamic (MD) modeling studies.


2014 ◽  
Vol 104 (6) ◽  
pp. 061906 ◽  
Author(s):  
V. Nikas ◽  
S. Gallis ◽  
M. Huang ◽  
A. E. Kaloyeros ◽  
A. P. D. Nguyen ◽  
...  

2011 ◽  
Vol 1287 ◽  
Author(s):  
Anupama Mallikarjunan ◽  
Laura M Matz ◽  
Andrew D Johnson ◽  
Raymond N Vrtis ◽  
Manchao Xiao ◽  
...  

ABSTRACTThe electrical and physical quality of gate and passivation dielectrics significantly impacts the device performance of thin film transistors (TFTs). The passivation dielectric also needs to act as a barrier to protect the TFT device. As low temperature TFT processing becomes a requirement for novel applications and plastic substrates, there is a need for materials innovation that enables high quality plasma enhanced chemical vapor deposition (PECVD) gate dielectric deposition. In this context, this paper discusses structure-property relationships and strategies for precursor development in silicon nitride, silicon oxycarbide (SiOC) and silicon oxide films. Experiments with passivation SiOC films demonstrate the benefit of a superior precursor (LkB-500) and standard process optimization to enable lower temperature depositions. For gate SiO2 deposition (that are used with polysilicon TFTs for example), organosilicon precursors containing different types and amounts of Si, C, O and H bonding were experimentally compared to the industry standard TEOS (tetraethoxysilane) at different process conditions and temperatures. Major differences were identified in film quality especially wet etch rate or WER (correlating to film density) and dielectric constant (k) values (correlating to moisture absorption). Gate quality SiO2 films can be deposited by choosing precursors that can minimize residual Si-OH groups and enable higher density stable moisture-free films. For e.g., the optimized precursor AP-LTO® 770 is clearly better than TEOS for low temperature PECVD depositions based on density, WER, k charge density (measured by flatband voltage or Vfb); and leakage and breakdown voltage (Vbd) measurements. The design and development of such novel precursors is a key factor to successfully enable manufacturing of advanced low temperature processed devices.


2016 ◽  
Vol 09 (03) ◽  
pp. 1650043 ◽  
Author(s):  
Haolin Wu ◽  
Jie Yang ◽  
Haibiao Chen ◽  
Feng Pan

Preferentially etching either carbon or silica from silicon oxycarbide (SiOC) created a porous network as an inverse image of the removed phase. The porous structure was analyzed by gas adsorption, and the experimental results verified the nanodomain structure of SiOC. This work demonstrated a novel approach for analyzing materials containing nanocomposite structures.


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