scholarly journals Radiation Tolerance in Nano-Structured Crystalline Fe(Cr)/Amorphous SiOC Composite

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 147
Author(s):  
Qing Su ◽  
Tianyao Wang ◽  
Lin Shao ◽  
Michael Nastasi
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Irradiation Dose ◽  
Room Temperature ◽  
Silicon Oxycarbide ◽  
Radiation Response ◽  
Radiation Tolerance ◽  
Width Direction ◽  
Cr Film ◽  
Radiation Tolerant

The management of irradiation defects is one of key challenges for structural materials in current and future reactor systems. To develop radiation tolerant alloys for service in extreme irradiation environments, the Fe self-ion radiation response of nanocomposites composed of amorphous silicon oxycarbide (SiOC) and crystalline Fe(Cr) were examined at 10, 20, and 50 displacements per atom damage levels. Grain growth in width direction was observed to increase with increasing irradiation dose in both Fe(Cr) films and Fe(Cr) layers in the nanocomposite after irradiation at room temperature. However, compared to the Fe(Cr) film, the Fe(Cr) layers in the nanocomposite exhibited ~50% less grain growth at the same damage levels, suggesting that interfaces in the nanocomposite were defect sinks. Moreover, the addition of Cr to α-Fe was shown to suppress its grain growth under irradiation for both the composite and non-composite case, consistent with earlier molecular dynamic (MD) modeling studies.

scholarly journals Superior radiation tolerant materials: Amorphous silicon oxycarbide

2015 ◽  
Vol 461 ◽  
pp. 200-205 ◽  
Author(s):  
Michael Nastasi ◽  
Qing Su ◽  
Lloyd Price ◽  
Juan A. Colón Santana ◽  
Tianyi Chen ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxycarbide ◽  
Radiation Tolerant

Irradiation Effects in Space Solar Cells Made of Multiple Absorbers

2001 ◽  
Vol 692 ◽  
Author(s):  
M. J. Romero ◽  
R. J. Walters ◽  
M. M. Al-Jassim ◽  
S. R. Messenger ◽  
G. P. Summers
Keyword(s):  
Power Generation ◽  
Solar Cells ◽  
Radiation Response ◽  
Radiation Tolerance ◽  
Irradiation Effects ◽  
Main Challenge ◽  
Junction Device ◽  
Extended Range ◽  
In Series ◽  
Radiation Tolerant

AbstractSolar cells made of multiple absorbers are a commonly used approach for improving efficiency due to their extended range of spectral sensitivity. Indeed, efficiencies nearing the theoretical maximum have been achieved with a triple-junction device made of In0.51Ga0.49P (InGaP2), GaAs, and Ge solar cells connected in series. For extraterrestrial applications, there is the added requirement of radiation tolerance. The main challenge for space power-generation is therefore the development of highly efficient and radiation-tolerant devices. We have investigated several aspects of the radiation response of solar cells made of multiple absorbers, such as multijunction devices and quantum-well solar cells. Novel possibilities such as quantumdot solar cells and ordered-disordered heterostructures are proposed.

scholarly journals Compositional effects on radiation tolerance of amorphous silicon oxycarbide

2019 ◽  
Vol 518 ◽  
pp. 241-246 ◽  
Author(s):  
Shoki Mizuguchi ◽  
Shinsuke Inoue ◽  
Manabu Ishimaru ◽  
Qing Su ◽  
Michael Nastasi
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxycarbide ◽  
Radiation Tolerance ◽  
Compositional Effects

scholarly journals In Situ Grain Growth of Nanograined Magnetite under Ion Irradiation at Room Temperature and 500 ℃

2021 ◽  
Vol 27 (S1) ◽  
pp. 2640-2643
Author(s):  
Chris McRobie ◽  
Ryan Schoell ◽  
Tiffany Kaspar ◽  
Daniel Schreiber ◽  
Djamel Kaoumi
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Ion Irradiation

Radiation response of amorphous silicon imaging arrays at diagnostic energies

1994 ◽  
Vol 41 (4) ◽  
pp. 1500-1505 ◽  
Author(s):  
L.E. Antonuk ◽  
J.H. Siewerdsen ◽  
J. Yorkston ◽  
W. Huang
Keyword(s):  
Amorphous Silicon ◽  
Radiation Response ◽  
Imaging Arrays

Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Si Substrate ◽  
Ferromagnetic Thin Films ◽  
Precipitation Reactions ◽  
Post Deposition ◽  
Xrd And Tem ◽  
Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

1998 ◽  
Vol 227-230 ◽  
pp. 1164-1167 ◽  
Author(s):  
Oleg Gusev ◽  
Mikhail Bresler ◽  
Alexey Kuznetsov ◽  
Vera Kudoyarova ◽  
Petr Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Er Doped ◽  
Hydrogenated Amorphous

Absolute radiation tolerance of amorphous alumina coatings at room temperature

2021 ◽  
Author(s):  
A. Zaborowska ◽  
Ł. Kurpaska ◽  
M. Clozel ◽  
E.J. Olivier ◽  
J.H. O'Connell ◽  
...  
Keyword(s):  
Room Temperature ◽  
Radiation Tolerance ◽  
Alumina Coatings ◽  
Amorphous Alumina

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

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