High-performance Ti and W co-doped indium oxide films for silicon heterojunction solar cells prepared by reactive plasma deposition

2021 ◽  
Vol 506 ◽  
pp. 230101
Author(s):  
Wei Huang ◽  
Jianhua Shi ◽  
Yiyang Liu ◽  
Zhuopeng Wu ◽  
Fanying Meng ◽  
...  
RSC Advances ◽  
2017 ◽  
Vol 7 (43) ◽  
pp. 26776-26782 ◽  
Author(s):  
Fengyou Wang ◽  
Yanbo Gao ◽  
Zhenyu Pang ◽  
Lili Yang ◽  
Jinghai Yang

Interface defects and the back surface field of p-type heterojunction solar cells are investigated for achieving high performance.


2015 ◽  
Vol 2 (6) ◽  
pp. 065902 ◽  
Author(s):  
Jian He ◽  
Pingqi Gao ◽  
Jiang Sheng ◽  
Xi Yang ◽  
Suqiong Zhou ◽  
...  

Solar RRL ◽  
2020 ◽  
pp. 2000501
Author(s):  
Zhirong Yao ◽  
Weiyuan Duan ◽  
Paul Steuter ◽  
Jürgen Hüpkes ◽  
Andreas Lambertz ◽  
...  

2021 ◽  
Vol 1160 ◽  
pp. 51-55
Author(s):  
Cheng Ying Shi ◽  
Guang Hong Wang

Hafnium and Hydrogen co-doped indium oxide films (IHFO:H) were prepared by radio frequency magnetron sputtering technology. The effect of hydrogen-donor dopant on the structural, optical and electrical properties of the films was investigated systematically. The resistivity of the IHFO:H film decreased by 2.4×10-4 Ω cm and the mobility improved by 8.2 cm2/Vs compared with Hafnium oxide doped indium oxide film. Employing the IHFO:H film as an electrode for a solar cell can improve efficiency.


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