Tetranuclear yttrium and gadolinium 2-acetylcyclopentanoate clusters: Synthesis and their use as spin-coating precursors for metal oxide film formation for field-effect transistor fabrication

2018 ◽  
Vol 36 (10) ◽  
pp. 1098-1105 ◽  
Author(s):  
Elaheh Pousaneh ◽  
Andrea Preuβ ◽  
Khaybar Assim ◽  
Tobias Rüffer ◽  
Marcus Korb ◽  
...  
Keyword(s):  
Oxide Film ◽  
Metal Oxide ◽  
Spin Coating ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Film Formation ◽  
Effect Transistor ◽  
Transistor Fabrication ◽  
Metal Oxide Film

Short-channel polymer field-effect-transistor fabrication using spin-coating-induced edge template and ink-jet printing

2005 ◽  
Vol 87 (23) ◽  
pp. 232111 ◽  
Author(s):  
S. P. Li ◽  
D. P. Chu ◽  
C. J. Newsome ◽  
D. M. Russell ◽  
T. Kugler ◽  
...  
Keyword(s):  
Spin Coating ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Short Channel ◽  
Ink Jet Printing ◽  
Ink Jet ◽  
Jet Printing ◽  
Effect Transistor ◽  
Transistor Fabrication

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

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