Oxygen partial pressure dependence of the structural properties of CdO thin films deposited by a modified reactive vacuum evaporation process

2005 ◽  
Vol 89 (2-3) ◽  
pp. 205-210 ◽  
Author(s):  
F.C. Eze
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Structural Properties ◽  
Pressure Dependence ◽  
Vacuum Evaporation ◽  
Evaporation Process ◽  
Cdo Thin Films

Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing

2010 ◽  
Vol 45 (22) ◽  
pp. 6206-6211 ◽  
Author(s):  
W. W. Liu ◽  
B. Yao ◽  
Y. F. Li ◽  
B. H. Li ◽  
Z. Z. Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Dependence

Influence of oxygen partial pressure on optical and structural properties of RF sputtered ZnO thin films

2016 ◽  
Author(s):  
P. Murkute ◽  
S. Saha ◽  
S. K. Pandey ◽  
A. Chatterjee ◽  
D. Datta ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Structural Properties ◽  
Zno Thin Films

Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films

2008 ◽  
Vol 254 (18) ◽  
pp. 5868-5873 ◽  
Author(s):  
R.K. Gupta ◽  
K. Ghosh ◽  
R. Patel ◽  
S.R. Mishra ◽  
P.K. Kahol
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Cdo Thin Films

Cupric Oxide Thin Films for Photovoltaic Applications

2013 ◽  
Vol 1538 ◽  
pp. 185-190
Author(s):  
Patrick J. M. Isherwood ◽  
Biancamaria Maniscalco ◽  
Fabiana Lisco ◽  
Piotr M. Kaminski ◽  
Jake W. Bowers ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Structural Properties ◽  
Cupric Oxide ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Oxide Thin Films ◽  
Glass Slides ◽  
Increasing Temperature

ABSTRACTCupric oxide thin films were sputtered onto soda-lime glass slides from a single pre-formed ceramic target using a radio-frequency power supply. The effects of oxygen partial pressure and substrate temperature on the optical, electrical and structural properties of the films were studied. It was found that increasing temperature resulted in increased crystallinity and crystal size but also increased film resistivity. The most conductive films were those deposited at room temperature. Increasing oxygen partial pressure was found to reduce resistivity dramatically. This is thought to be due to higher charge carrier concentrations resulting from increased copper vacancies. Increasing oxygen partial pressure causes an increase in the optical band gap from a minimum of 0.8eV up to a maximum of 1.42eV. Oxygen-rich films display reduced crystallinity, becoming increasingly amorphous with increased oxygen content. These results show that the optical, electrical and structural properties of sputtered cupric oxide films can be controlled by alteration of the deposition environment.

Oxygen partial pressure dependence of memory effect of sputtered nc-Al/α-Al2O3 thin films

2008 ◽  
Vol 460 (1-2) ◽  
pp. 115-119 ◽  
Author(s):  
Yibin Li ◽  
Yue Sun ◽  
Wenzhu Zhang ◽  
Yujie Ding ◽  
Xiaodong He
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Memory Effect ◽  
Pressure Dependence ◽  
Α Al2o3
Sign in / Sign up

Export Citation Format

Share Document