High dielectric constant and low optical band gap studies of La-modified Ba(Fe0.5Nb0.5)O3 ceramics

2015 ◽  
Vol 155 ◽  
pp. 171-177 ◽  
Author(s):  
Subrat Kumar Kar ◽  
Sridevi Swain ◽  
Sonia ◽  
Pawan Kumar
2012 ◽  
Vol 520 (14) ◽  
pp. 4532-4535 ◽  
Author(s):  
O. Fursenko ◽  
J. Bauer ◽  
G. Lupina ◽  
P. Dudek ◽  
M. Lukosius ◽  
...  

2019 ◽  
Vol 48 (36) ◽  
pp. 13813-13819
Author(s):  
Amira Siai ◽  
Alexandru Oprea ◽  
Markus Ströbele ◽  
Hans-Jürgen Meyer

The new compound K2Pb(OCN)I3 was synthesized by the solid-state reaction of PbI2 and KOCN. Built-up form two interpenetrating tetrahedral-octahedral frameworks, it is a direct band-gap semiconductor (2.4 eV) with rather high dielectric constant.


2012 ◽  
Vol 583 ◽  
pp. 158-161
Author(s):  
Hui Yu Yan ◽  
Yan Rui Guo ◽  
Qing Gong Song

The structures and electronic properties of (LaxAl1-x)2O3 are studied by first-principles calculation method. The results show that the composite material (LaxAl1-x)2O3 tend to be in sixfold-coordinated structure when x0.7. (LaxAl1-x)2O3 is in disorder structure and get the minimum band gap when x equals about 0.7. It suggest that (LaxAl1-x)2O3 can be synthesized as high dielectric constant material by doping La2O3 with a lower Al dopant concentrations or by fabricating (LaxAl1-x)2O3 with rich Al content.


2015 ◽  
Vol 119 (42) ◽  
pp. 23883-23889 ◽  
Author(s):  
Ryan S. Gebhardt ◽  
Pengfei Du ◽  
Akshit Peer ◽  
Mitch Rock ◽  
Michael R. Kessler ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (57) ◽  
pp. 32984-32994 ◽  
Author(s):  
Junhui Weng ◽  
Shang-Peng Gao

The ultrathin ZrO2 dielectric layer reveals structural stability in contrast to its bulk form, large band gap and high dielectric constant.


2020 ◽  
Vol 8 (32) ◽  
pp. 16661-16668
Author(s):  
Huayao Tu ◽  
Shouzhi Wang ◽  
Hehe Jiang ◽  
Zhenyan Liang ◽  
Dong Shi ◽  
...  

The carbon fiber/metal oxide/metal oxynitride layer sandwich structure is constructed in the electrode to form a mini-plate capacitor. High dielectric constant metal oxides act as dielectric to increase their capacitance.


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