Synthesis and investigation into the structural, electronic and electrical properties of K2Pb(OCN)I3

2019 ◽  
Vol 48 (36) ◽  
pp. 13813-13819
Author(s):  
Amira Siai ◽  
Alexandru Oprea ◽  
Markus Ströbele ◽  
Hans-Jürgen Meyer
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Electrical Properties ◽  
Band Gap ◽  
Solid State Reaction ◽  
High Dielectric Constant ◽  
Compound K ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Dielectric

The new compound K2Pb(OCN)I3 was synthesized by the solid-state reaction of PbI2 and KOCN. Built-up form two interpenetrating tetrahedral-octahedral frameworks, it is a direct band-gap semiconductor (2.4 eV) with rather high dielectric constant.

Preparation and Dielectric Properties of Sm3+-Substituted SrBi8Ti7O27 Based Microwave Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 95-98
Author(s):  
Yan Xiang Wang ◽  
C. Fang ◽  
Min Tang ◽  
Hong Qiu ◽  
Zhao Xian Xiong
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Solid State ◽  
Solid State Reaction ◽  
High Dielectric Constant ◽  
Microwave Ceramics ◽  
Reaction Route ◽  
Solid State Reaction Route ◽  
Dta And Tg ◽  
High Dielectric

Sr(Bi1-xSmx)8Ti7O27 ceramics were prepared by Sm2O3-substitution for Bi2O3 through solid-state reaction route. The dielectric properties of the sintered bodies such as er, Q and tf were investigated. The ceramics were characterized by SEM, XRD, DTA and TG, which behaved high dielectric constant of 128 ~154 at the frequency of 10 GHz.

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

Optical properties and band gap characterization of high dielectric constant oxides

2012 ◽  
Vol 520 (14) ◽  
pp. 4532-4535 ◽  
Author(s):  
O. Fursenko ◽  
J. Bauer ◽  
G. Lupina ◽  
P. Dudek ◽  
M. Lukosius ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
Band Gap ◽  
High Dielectric Constant ◽  
High Dielectric

Progress in nitrile-based polymer electrolytes for high performance lithium batteries

2016 ◽  
Vol 4 (26) ◽  
pp. 10070-10083 ◽  
Author(s):  
Pu Hu ◽  
Jingchao Chai ◽  
Yulong Duan ◽  
Zhihong Liu ◽  
Guanglei Cui ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
High Voltage ◽  
Lithium Batteries ◽  
Polymer Electrolytes ◽  
High Performance ◽  
Recent Progress ◽  
High Dielectric Constant ◽  
Lithium Ions ◽  
High Dielectric

Nitrile-based polymer electrolytes have unique characteristics such as a high dielectric constant, high anodic oxidization potential and favorable interaction with lithium ions. Recent progress in nitrile-based polymer electrolytes has been reviewed in terms of their potential application in flexible, solid-state or high voltage lithium batteries in this paper.

Study of SrTiO3 Gate Dielectrics

2006 ◽  
Vol 966 ◽  
Author(s):  
C.Y. Liu ◽  
Tseung-Yuen Tseng
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Silicon Substrate ◽  
Interfacial Layer ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Measurement Techniques ◽  
High Quality ◽  
High Dielectric

ABSTRACTAmong various possible candidates of high-k gate dielectrics, SrTiO3 plays an important role because it has high dielectric constant and it can be epitaxially grown on silicon substrate. The fabrication process and properties of SrTiO3 gate dielectrics are reported. The effect of the addition of SiO2 on the microstructure and electrical properties of SrTiO3 gate dielectric is also presented. The minimization of the effect of interfacial layer between SrTiO3 and Si is the most important issue for obtaining high quality high-k gate dielectrics. The possible methods to improve the interfacial properties and the measurement techniques to characterize the interfacial layer are discussed.

Microstructure and Electrical Properties of CeO2-Doped WO3 Ceramics Prepared by Nanopowders

2007 ◽  
Vol 280-283 ◽  
pp. 381-384
Author(s):  
Xin Sheng Yang ◽  
Yu Wang ◽  
Liang Dong
Keyword(s):  
Electrical Conductivity ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
High Dielectric Constant ◽  
Raw Materials ◽  
Nonlinear Coefficient ◽  
Metallic Behavior ◽  
High Dielectric ◽  
Increasing Temperature ◽  
Semiconducting Behavior

CeO2-doped WO3 ceramics were fabricated by using nanometer WO3 and CeO2 powders as raw materials. The microstructure and electrical properties were studied. The ceramics have relatively low breakdown voltage and high dielectric constant. The nonlinear coefficient does not decrease with the increase of the ambient temperature. The electrical conductivity decreases with increasing temperature, indicating that the ceramics have metallic behavior instead of semiconducting behavior.

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