Chemical solution deposition of magnetoelectric ZnO–La2CoMnO6 nanocomposite thin films using a single precursor solution

Au–LaNiO3 (Au–LNO) nanocomposite films with 3.84 at% Au were firstly fabricated by one-step chemical solution deposition (CSD), and their electrical properties were investigated.

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Synthesis of Sr2KNb5O15 Thin Films by Chemical Solution Deposition Method

Journal of Materials Research ◽

10.1557/jmr.1999.0200 ◽

1999 ◽

Vol 14 (4) ◽

pp. 1495-1502 ◽

Cited By ~ 1

Author(s):

Wataru Sakamoto ◽

Toshinobu Yogo ◽

Takae Kuroyanagi ◽

Shin-ichi Hirano

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Tungsten Bronze ◽

Precursor Solution ◽

Fused Silica ◽

Deposition Method ◽

Chemical Solution ◽

Tetragonal Tungsten Bronze ◽

Solution Deposition ◽

Chemical Solution Deposition Method

Crack-free and transparent Sr2KNb5O15 (SKN) thin films have been synthesized by the chemical solution deposition method. A homogeneous and stable precursor solution was prepared via controlling the reaction of metal alkoxides. SKN precursor was found to be the complex alkoxide between Sr[Nb(OEt)6]2 and KNb(OEt)6 with high structural symmetry. SKN powders and thin films on fused silica substrates directly crystallized to the polycrystalline tetragonal tungsten bronze phase at 600 °C. Highly oriented SKN thin films with the tetragonal tungsten bronze phase were fabricated on MgO(100) and Pt(100)/MgO(100) substrates. Two crystal lattice planes of SKN were intergrown at an orientation of 18.5° on MgO(100). The dielectric constant of SKN thin films on Pt(100)/MgO(100) was about 590 at 20 °C at 1 kHz.

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Mössbauer Spectra of 57Fe-Enriched BiFeO3 Thin Films Fabricated on SiO2/Si Substrates by Chemical Solution Deposition Process

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.582.63 ◽

2013 ◽

Vol 582 ◽

pp. 63-66 ◽

Cited By ~ 3

Author(s):

Kiyotaka Tanaka ◽

Yoshinori Tsukamoto ◽

Soichiro Okamura ◽

Yutaka Yoshida

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Perovskite Phase ◽

Precursor Solution ◽

Deposition Process ◽

Molar Ratio ◽

Chemical Solution ◽

Solution Deposition ◽

Si Substrates ◽

Mixture Phase

sup>57Fe-enriched BiFeO3 (BFO) thin films were fabricated on SiO2/Si substrates from a stoichiometric precursor solution by chemical solution deposition process. The Bi/Fe molar ratio of the thin films decreased from 0.95 to 0.80 with increase in the sintering temperature. A perovskite phase and flat surface were obtained in the BFO thin films sintered at 500 and 600 °C. However, the 57Fe Mössbauer spectra showed a mixture phase due to amorphous and/or Bi2Fe4O9 phases in the BFO thin films. The valence state of Fe ions of the BFO thin films was confirmed to be only Fe3+ by the Mössbauer spectra.

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CONVENIENT PREPARATION OF Pb(ZrxTi1-x)O3 THIN FILMS BY A COMBINATORIAL SYNTHESIS PROCESS

Functional Materials Letters ◽

10.1142/s1793604711002068 ◽

2011 ◽

Vol 04 (03) ◽

pp. 231-235 ◽

Cited By ~ 3

Author(s):

CHAO PENG ◽

DESEN ZHAO ◽

GANG HE ◽

MINGZHONG HE ◽

JIANHE HONG ◽

...

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Precursor Solution ◽

Deposition Process ◽

Combinatorial Synthesis ◽

Synthesis Process ◽

Chemical Solution ◽

Solution Deposition ◽

Exothermic Reactions ◽

Convenient Preparation

In order to carry out a convenient preparation of Pb ( Zr x Ti 1-x) O 3 thin films by combinatorial chemical solution deposition process, two kinds of Pb ( Zr x Ti 1-x) O 3 precursor solutions ( PbTiO3 precursor solution and PbZrO3 precursor solution) were prepared by a simple process. There is no distillation and no inert gas shielding in the process, and the precursors are more stable than the conventional precursor solution. A series of Pb ( Zr x Ti 1-x) O 3 samples (x = 0.1–0.9, in step of 0.1 amount change) were prepared using the two precursor solutions. The process was fast and saved time. There were strong exothermic reactions for the samples with the Zr content x in a short range from x = 0.23 to 0.27 at 161–200°C. The Pb ( Zr x Ti 1-x) O 3 thin films showed perovskite structure with strong (111)-preferred orientation. The structure and ferroelectric property of the PZT thin films are comparable with those of the PZT fabricated by conventional process.

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Seeded epitaxial growth of ZnO thin films on MgAl2O4 substrates using the chemical solution deposition method

Journal of Materials Research ◽

10.1557/jmr.2007.0109 ◽

2007 ◽

Vol 22 (4) ◽

pp. 943-949 ◽

Cited By ~ 2

Author(s):

Jin Hyeok Kim ◽

Boram Kim ◽

David Andeen ◽

Fred F. Lange

Keyword(s):

Thin Films ◽

Grain Boundaries ◽

Chemical Solution Deposition ◽

Precursor Solution ◽

Heat Treating ◽

Zno Thin Films ◽

Zno Films ◽

Chemical Solution ◽

Orientation Relationships ◽

Solution Deposition

Epitaxial ZnO thin films were grown on (111) MgAl2O4 with a pre-seeded, two-step chemical solution deposition process. Isolated, epitaxial ZnO islands (seeds) were formed on the substrate in the first step by spin coating a very thin layer of the precursor solution and heat-treating to 950 °C/3 h. In the second step, the seeded substrate was coated with another layer of precursor to produce an epitaxial film. The result was compared with the case in which a MgAl2O4 substrate was not seeded. Both the seeded and unseeded ZnO films have out-of-plane and in-plane orientation relationships of , respectively. However, only the seeded ZnO films have very faceted surface morphology without grain boundaries, indicating epitaxy, whereas the unseeded ZnO films have deep grain boundaries indicative of polycrystalline nature. This result shows that the formation of seeds in the first step plays an instrumental role in the formation of an epitaxial ZnO film.

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