The microstructure, ferroelectric and dielectric behaviors of Na0.5Bi0.5(Ti,Fe)O3 thin films synthesized by chemical solution deposition: Effect of precursor solution concentration

2017 ◽  
Vol 43 (2) ◽  
pp. 2033-2038 ◽  
Author(s):  
J.Q. Sun ◽  
C.H. Yang ◽  
J.H. Song ◽  
Y.Y. Zhou ◽  
Q. Yao ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Precursor Solution Concentration ◽  
Deposition Effect

Synthesis of Sr2KNb5O15 Thin Films by Chemical Solution Deposition Method

1999 ◽  
Vol 14 (4) ◽  
pp. 1495-1502 ◽  
Author(s):  
Wataru Sakamoto ◽  
Toshinobu Yogo ◽  
Takae Kuroyanagi ◽  
Shin-ichi Hirano
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Tungsten Bronze ◽  
Precursor Solution ◽  
Fused Silica ◽  
Deposition Method ◽  
Chemical Solution ◽  
Tetragonal Tungsten Bronze ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

Crack-free and transparent Sr2KNb5O15 (SKN) thin films have been synthesized by the chemical solution deposition method. A homogeneous and stable precursor solution was prepared via controlling the reaction of metal alkoxides. SKN precursor was found to be the complex alkoxide between Sr[Nb(OEt)6]2 and KNb(OEt)6 with high structural symmetry. SKN powders and thin films on fused silica substrates directly crystallized to the polycrystalline tetragonal tungsten bronze phase at 600 °C. Highly oriented SKN thin films with the tetragonal tungsten bronze phase were fabricated on MgO(100) and Pt(100)/MgO(100) substrates. Two crystal lattice planes of SKN were intergrown at an orientation of 18.5° on MgO(100). The dielectric constant of SKN thin films on Pt(100)/MgO(100) was about 590 at 20 °C at 1 kHz.

Mössbauer Spectra of 57Fe-Enriched BiFeO3 Thin Films Fabricated on SiO2/Si Substrates by Chemical Solution Deposition Process

2013 ◽  
Vol 582 ◽  
pp. 63-66 ◽  
Author(s):  
Kiyotaka Tanaka ◽  
Yoshinori Tsukamoto ◽  
Soichiro Okamura ◽  
Yutaka Yoshida
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Perovskite Phase ◽  
Precursor Solution ◽  
Deposition Process ◽  
Molar Ratio ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Mixture Phase

sup>57Fe-enriched BiFeO3 (BFO) thin films were fabricated on SiO2/Si substrates from a stoichiometric precursor solution by chemical solution deposition process. The Bi/Fe molar ratio of the thin films decreased from 0.95 to 0.80 with increase in the sintering temperature. A perovskite phase and flat surface were obtained in the BFO thin films sintered at 500 and 600 °C. However, the 57Fe Mössbauer spectra showed a mixture phase due to amorphous and/or Bi2Fe4O9 phases in the BFO thin films. The valence state of Fe ions of the BFO thin films was confirmed to be only Fe3+ by the Mössbauer spectra.

CONVENIENT PREPARATION OF Pb(ZrxTi1-x)O3 THIN FILMS BY A COMBINATORIAL SYNTHESIS PROCESS

2011 ◽  
Vol 04 (03) ◽  
pp. 231-235 ◽  
Author(s):  
CHAO PENG ◽  
DESEN ZHAO ◽  
GANG HE ◽  
MINGZHONG HE ◽  
JIANHE HONG ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Precursor Solution ◽  
Deposition Process ◽  
Combinatorial Synthesis ◽  
Synthesis Process ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Exothermic Reactions ◽  
Convenient Preparation

In order to carry out a convenient preparation of Pb ( Zr x Ti 1-x) O 3 thin films by combinatorial chemical solution deposition process, two kinds of Pb ( Zr x Ti 1-x) O 3 precursor solutions ( PbTiO3 precursor solution and PbZrO3 precursor solution) were prepared by a simple process. There is no distillation and no inert gas shielding in the process, and the precursors are more stable than the conventional precursor solution. A series of Pb ( Zr x Ti 1-x) O 3 samples (x = 0.1–0.9, in step of 0.1 amount change) were prepared using the two precursor solutions. The process was fast and saved time. There were strong exothermic reactions for the samples with the Zr content x in a short range from x = 0.23 to 0.27 at 161–200°C. The Pb ( Zr x Ti 1-x) O 3 thin films showed perovskite structure with strong (111)-preferred orientation. The structure and ferroelectric property of the PZT thin films are comparable with those of the PZT fabricated by conventional process.

Seeded epitaxial growth of ZnO thin films on MgAl2O4 substrates using the chemical solution deposition method

2007 ◽  
Vol 22 (4) ◽  
pp. 943-949 ◽  
Author(s):  
Jin Hyeok Kim ◽  
Boram Kim ◽  
David Andeen ◽  
Fred F. Lange
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Chemical Solution Deposition ◽  
Precursor Solution ◽  
Heat Treating ◽  
Zno Thin Films ◽  
Zno Films ◽  
Chemical Solution ◽  
Orientation Relationships ◽  
Solution Deposition

Epitaxial ZnO thin films were grown on (111) MgAl2O4 with a pre-seeded, two-step chemical solution deposition process. Isolated, epitaxial ZnO islands (seeds) were formed on the substrate in the first step by spin coating a very thin layer of the precursor solution and heat-treating to 950 °C/3 h. In the second step, the seeded substrate was coated with another layer of precursor to produce an epitaxial film. The result was compared with the case in which a MgAl2O4 substrate was not seeded. Both the seeded and unseeded ZnO films have out-of-plane and in-plane orientation relationships of , respectively. However, only the seeded ZnO films have very faceted surface morphology without grain boundaries, indicating epitaxy, whereas the unseeded ZnO films have deep grain boundaries indicative of polycrystalline nature. This result shows that the formation of seeds in the first step plays an instrumental role in the formation of an epitaxial ZnO film.

scholarly journals Chemical Solution Deposition of La-Substituted BiFe0.5Sc0.5O3 Perovskite Thin Films on Different Substrates

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 307
Author(s):  
Diana Griesiute ◽  
Dovydas Karoblis ◽  
Lina Mikoliunaite ◽  
Aleksej Zarkov ◽  
Andrei N. Salak ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Cost Effective ◽  
Deposition Process ◽  
Stability Study ◽  
Fused Silica ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Optimal Annealing Temperature ◽  
Xrd Patterns

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.

The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

2021 ◽  
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Metal Ion ◽  
Chemical Deposition ◽  
Review Article ◽  
Complexing Agents ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

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